APT20M22JVRU3 Microchip

APT20M22JVRU3 V = 200V DSS ISOTOP Buck chopper R = 22m max Tj = 25C DSon MOSFET Power Module I = 97A Tc = 25C D D Application AC and DC motor control Switched Mode Power Supplies G Features S Power MOS V MOSFETs - Low R DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode A - Avalanche energy rated - Very rugged ISOTOP Package (SOT-227) Very low stray inductance A S High level of integration Benefits D G Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Very rugged Low profile RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 200 V DSS T = 25C 97 c I Continuous Drain Current D T = 80C 72 A c I Pulsed Drain current 388 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 22 m DSon P Maximum Power Dissipation T = 25C 450 W D c I Avalanche current (repetitive and non repetitive) 97 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 2500 AS IF Maximum Average Forward Current Duty cycle=0.5 Tc = 90C 30 AV A IF RMS Forward Current (Square wave, 50% duty) 47 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1 8 www.microsemi.com APT20M22JVRU3 Rev 2 October 2012 APT20M22JVRU3 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 200V T = 25C 25 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 160V T = 125C 250 GS DS j R Drain Source on Resistance V = 10V, I = 48.5A 22 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 2 4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 8500 iss GS V = 25V pF C Output Capacitance 1950 DS oss f = 1MHz C Reverse Transfer Capacitance 560 rss Q Total gate Charge 290 g V = 10V GS V = 100V nC Q Gate Source Charge 66 gs Bus I = 97A T =25C D J Q Gate Drain Charge 120 gd T Turn-on Delay Time 16 d(on) V = 15V GS T Rise Time 25 r V = 100V Bus ns I = 97A T =25C D J T Turn-off Delay Time 48 d(off) R = 0.6 G T Fall Time 8 f Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 30A 1.1 1.15 F V Diode Forward Voltage V F I = 60A 1.4 F I = 30A T = 125C 0.9 F j V = 200V T = 25C 250 R j I Maximum Reverse Leakage Current A RM V = 200V T = 125C 500 R j C Junction Capacitance V = 200V 94 pF T R I =1A,V =30V F R Reverse Recovery Time T = 25C 21 j di/dt =200A/s t ns rr T = 25C 24 j Reverse Recovery Time T = 125C 48 j I = 30A F T = 25C 3 j I Maximum Reverse Recovery Current A RRM V = 133V R T = 125C 6 j di/dt =200A/s T = 25C 33 j Q Reverse Recovery Charge nC rr T = 125C 150 j t Reverse Recovery Time 31 ns I = 30A rr F V = 133V T = 125C Q Reverse Recovery Charge R j 335 nC rr di/dt =1000A/s I Maximum Reverse Recovery Current 19 A RRM 2 8 www.microsemi.com APT20M22JVRU3 Rev 2 October 2012