APT26M100JCU2 V = 1000V DSS ISOTOP Boost chopper R = 330m typ Tj = 25C MOSFET + SiC chopper diode DSon I = 26A Tc = 25C Power module D Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low R DSon - Low input and Miller capacitance - Low gate charge S - Avalanche energy rated SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF K S ISOTOP Package (SOT-227) Very low stray inductance High level of integration D G Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged ISOTOP Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 1000 V DSS T = 25C 26 c I Continuous Drain Current D T = 80C 20 A c I Pulsed Drain current 140 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 396 DSon m P Maximum Power Dissipation T = 25C 543 W D c I Avalanche current (repetitive and non repetitive) 18 A AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-6 www.microsemi.com APT26M100JCU2 Rev 1 October , 2012 APT26M100JCU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V =1000V T = 25C 100 j DS I Zero Gate Voltage Drain Current A DSS V = 0V GS T = 125C 500 j R Drain Source on Resistance V = 10V, I = 18A 330 396 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 3 4 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V 100 nA GSS GS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 7868 V = 0V iss GS V = 25V pF C Output Capacitance 825 oss DS f = 1MHz C Reverse Transfer Capacitance 104 rss Q Total gate Charge 305 g V = 10V GS Q Gate Source Charge V = 500V 55 nC gs Bus I = 18A D Q Gate Drain Charge 145 gd T Turn-on Delay Time 44 d(on) Resistive switching 25C V = 15V GS T Rise Time 40 r V = 667V ns Bus T Turn-off Delay Time 150 d(off) I = 18A D R = 2.2 T Fall Time G 38 f SiC chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Peak Repetitive Reverse Voltage V 1200 V RRM T = 25C 32 200 j I Maximum Reverse Leakage Current V =1200V A RM R T = 175C 56 1000 j I DC Forward Current Tc = 100C 10 A F T = 25C 1.6 1.8 j V Diode Forward Voltage I = 10A V F F T = 175C 2.3 3 j I = 10A, V = 600V F R Q Total Capacitive Charge 80 nC C di/dt =500A/s f = 1MHz, V = 200V 96 R C Total Capacitance pF f = 1MHz, V = 400V 69 R Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Mosfet 0.23 R Junction to Case Thermal Resistance thJC C/W SiC Diode 1.65 R Junction to Ambient (IGBT & Diode) 20 thJA RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz V 2500 V ISOL T ,T Storage Temperature Range -40 150 J STG C T Max Lead Temp for Soldering:0.063 from case for 10 sec 300 L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g 2-6 www.microsemi.com APT26M100JCU2 Rev 1 October , 2012