23 2 3 2 3 1 14 1 4 4 Anti-Paralle l P aralle l APT2x100DQ100J APT2x101DQ100J APT2x101DQ100J 1000V 100AUL Recognize file E145592 IS OT OP APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Increased System Power Uninterruptible Power Supply (UPS) High Blocking Voltage Density Induction Heating Low Leakage Current High Speed Recti ers Avalanche Energy Rated MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Characteristic / Test Conditions APT2x101 100DQ100J Symbol UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 64C, Duty Cycle = 0.5) I 100 C F(AV) I RMS Forward Current (Square wave, 50% duty) 133 Amps F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 1000 J FSM E Avalanche Energy (1A, 40mH) 20 mJ AVL T ,T -55 to 175 C Operating and StorageTemperature Range J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 100A 2.1 2.7 F I = 150A V Forward Voltage Volts 2.34 F F I = 100A, T = 125C 1.64 F J V = 1000V 100 R I Maximum Reverse Leakage Current A RM V = 1000V, T = 125C 500 R J C pF Junction Capacitance, V = 200V 120 T R Microsemi Website - DYNAMIC CHARACTERISTICS APT2x101 100DQ100J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 45 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 290 rr I = 100A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 685 rr V = 667V, T = 25C R C I Maximum Reverse Recovery Current - 6 - Amps RRM t Reverse Recovery Time - 340 ns rr I = 100A, di /dt = -200A/s Q F F - 3645 nC Reverse Recovery Charge rr V = 667V, T = 125C R C I - 18 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 160 ns rr I = 100A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 7085 nC rr V = 667V, T = 125C R C I - 70 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R .41 C/W Junction-to-Case Thermal Resistance JC V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts Isolation 2500 oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.45 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.3 0.15 t 2 0.10 t 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T 0.05 J DM JC C SINGLE PULSE 0.05 0 -4 -2 -5 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4231 Rev D 3-2011 Z , THERMAL IMPEDANCE (C/W) JC P DM