X-On Electronics has gained recognition as a prominent supplier of APT2X60D120J Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT2X60D120J Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT2X60D120J Microchip

APT2X60D120J electronic component of Microchip
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Part No.APT2X60D120J
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Datasheet: APT2X60D120J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 42.2375 ea
Line Total: USD 42.24 
Availability - 58
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
58
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 42.2375
5 : USD 40.775
10 : USD 40.1625
25 : USD 39.5625
50 : USD 38.9625
100 : USD 32.4375
250 : USD 31.95

   
Manufacturer
Product Category
Technology
Case
Semiconductor Structure
Mounting
Electrical Mounting
Type Of Module
Max. Off-State Voltage
Load Current
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We are delighted to provide the APT2X60D120J from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT2X60D120J and other electronic components in the Discrete Semiconductor Modules category and beyond.

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New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 1 4 1 4 1 4 Anti-Parallel Parallel APT2X60D120J APT2X61D120J APT2X61D120J 1200V 53AUL Recognize file E145592 ISOTOP APT2X60D120J 1200V 53A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Anti-Parallel Diode Ultrafast Recovery Times Low Losses -Switchmode Power Supply -Inverters Soft Recovery Characteristics Low Noise Switching Free Wheeling Diode -Motor Controllers Popular SOT-227 Package Cooler Operation -Converters Higher Reliability Systems Snubber Diode Low Forward Voltage Uninterruptible Power Supply (UPS) Increased System Power High Blocking Voltage Induction Heating Density High Speed Rectiers Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specied. C Symbol Characteristic / Test Conditions APT2X61 60D120J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage Volts 1200 RRM V Maximum Working Peak Reverse Voltage RWM Maximum Average Forward Current (T = 101C, Duty Cycle = 0.5) I 53 C F(AV) I RMS Forward Current (Square wave, 50% duty) Amps 75 F(RMS) Non-Repetitive Forward Surge Current (T = 45C, 8.3ms) I 540 J FSM T ,T Operating and StorageTemperature Range -55 to 175 J STG C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I = 60A 2.0 2.5 F I = 120A V Forward Voltage Volts 2.3 F F I = 60A, T = 125C 1.8 F J V = V Rated 250 R R I Maximum Reverse Leakage Current A RM V = V Rated, T = 125C 500 R R J C pF Junction Capacitance, V = 200V 60 T R APT Website - New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2X61 60D120J Symbol Characteristic Test Conditions MIN TYP MAX UNIT t I = 1A, di /dt = -100A/s, V = 30V, T = 25C - 38 Reverse Recovery Time rr F F R J ns t Reverse Recovery Time - 400 rr I = 60A, di /dt = -200A/s Q F F nC Reverse Recovery Charge - 1200 rr V = 800V, T = 25C R C I Maximum Reverse Recovery Current - 6 - Amps RRM t Reverse Recovery Time - 470 ns rr I = 60A, di /dt = -200A/s Q F F - 4000 nC Reverse Recovery Charge rr V = 800V, T = 125C R C I - 13 - Maximum Reverse Recovery Current Amps RRM t Reverse Recovery Time - 200 ns rr I = 60A, di /dt = -1000A/s F F Q Reverse Recovery Charge - 6200 nC rr V = 800V, T = 125C R C I - 47 Maximum Reverse Recovery Current Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R .56 C/W Junction-to-Case Thermal Resistance JC V RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Volts Isolation 2500 oz 1.03 W Package Weight T g 29.2 lbin 10 Torque Maximum Mounting Torque 1.1 Nm APT Reserves the right to change, without notice, the specications and information contained herein. 0.60 0.9 0.50 0.7 0.40 0.30 0.5 Note: t 1 0.20 0.3 t 2 t 0.10 1 t Duty Factor D = / 2 0.1 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (C) 0.148 0.006 Power 0.238 0.0909 (watts) 0.174 0.524 Case temperature ( C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 053-0012 Rev F 10-2005 Z , THERMAL IMPEDANCE (C/W) JC P DM

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