TO-247 APT30GS60BRDQ2(G) APT30GS60SRDQ2(G) 600V, 30A, V = 2.8V Typical CE(ON) Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher V for signi cantly lower turn-on energy E . The low CE(ON) off switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive V temperature coef cient 3 CE(ON) D PAK make it easy to parallel Thunderbolts HS IGBT s. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10 s make these IGBT s suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. APT30GS60BRDQ2(G) Features Typical Applications APT30GS60SRDQ2(G) Fast Switching with low EMI ZVS Phase Shifted and other Full Bridge Single die Very Low E for Maximum Ef ciency Half Bridge OFF IGBT with separate DQ Short circuit rated High Power PFC Boost diode die Low Gate Charge Welding Tight parameter distribution Induction heating Easy paralleling High Frequency SMPS RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating Unit Continuous Collector Current T = 25C I 54 C C1 I Continuous Collector Current T = 100C 30 A C2 C 1 I Pulsed Collector Current 113 CM V Gate-Emitter Voltage 30V V GE SSOA Switching Safe Operating Area 113 2 E Single Pulse Avalanche Energy 20 mJ AS 2 t Short Circut Withstand Time 10 s SC T = 25C 90 C I Diode Continuous Forward Current F T = 100C 55 A C I Diode Max. Repetitive Forward Current 113 FRM Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Unit P Total Power Dissipation T = 25C 250 W D C IGBT 0.50 R Junction to Case Thermal Resistance JC Diode 0.67 C/W R Case to Sink Thermal Resistance, Flat Greased Surface 0.11 CS T , T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L 0.22 oz W Package Weight T 5.9 g 10 inlbf Torque Mounting Torque (TO-247), 6-32 M3 Screw 1.1 Nm CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT30GS60B SRDQ2(G) J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250 A Collector-Emitter Breakdown Voltage GE 600 V BR(CES) C V /T Reference to 25C, I = 250 A Breakdown Voltage Temperature Coeff 0.60 V/C BR(CES) J C T = 25C V = 15V 2.8 3.15 J GE 3 V Collector-Emitter On Voltage CE(ON) I = 30A T = 125C C 3.25 J T = 25C 1.85 V J 3 V Diode Forward Voltage I = 30A EC C T = 125C 1.5 J V Gate-Emitter Threshold Voltage 34 5 GE(th) V = V , I = 1mA GE CE C V /T Threshold Voltage Temp Coeff 6.7 mV/C GE(th) J T = 25C V = 600V, 50 J CE I Zero Gate Voltage Collector Current A CES V = 0V T = 125C GE 1000 J I V = 20V Gate-Emitter Leakage Current 100 nA GES GE Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 30A Forward Transconductance 18 S fs CE C C Input Capacitance 1600 ies V = 0V, V = 25V GE CE C Output Capacitance 140 oes f = 1MHz C Reverse Transfer Capacitance 90 res pF Reverse Transfer Capacitance C 130 o(cr) 4 Charge Related V = 0V GE V = 0 to 400V Reverse Transfer Capacitance CE C 95 o(er) 5 Current Related Q Total Gate Charge 145 g V = 0 to 15V Q GE Gate-Emitter Charge 12 nC ge I = 30A, V = 300V C CE G Gate-Collector Charge 65 gc t Turn-On Delay Time 16 d(on) t Rise Time 29 r Inductive Switching IGBT and ns t Diode: Turn-Off Delay Time 360 d(off) t Fall Time 27 f T = 25C, V = 400V, J CC 7 E Turn-On Switching Energy TBD on1 I = 30A C 6 8 E R = 9.1 , V = 15V Turn-On Switching Energy 800 J on2 G GG 9 E Turn-Off Switching Energy 570 off t Turn-On Delay Time 16 d(on) Inductive Switching IGBT and t Rise Time 29 r Diode: ns t Turn-Off Delay Time 390 d(off) t Fall Time T = 125C, V = 400V, 22 f J CC I = 30A 7 E C Turn-On Switching Energy TBD on1 6 R = 9.1 , V = 15V G GG 8 E Turn-On Switching Energy 1185 J on2 9 E Turn-Off Switching Energy 695 off t Diode Reverse Recovery Time 25 ns rr I = 40A F Q Diode Reverse Recovery Charge V = 400V 35 nC rr R di /dt = 200A/s I F Peak Reverse Recovery Current 3 A rrm 052-6302 Rev B 3-2012