APT32M80J 800V, 33A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low CMille capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure UL Recognize help control slew rates during switching, resulting in low EMI and reliable paralleling, file E145592 IS OTO P even when switching at very high frequency. Reliability in yback, boost, forward, and APT32M80J other circuits is enhanced by the high avalanche energy capability. Single die MOSFET FEATURES TYPICAL APPLICATIONS Fast switching with low EMI/RFI PFC and other boost converter Low R Buck converter DS(on) Two switch forward (asymmetrical bridge) Ultra low C for improved noise immunity rss Single switch forward Low gate charge Flyback Avalanche energy rated RoHS compliant Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 33 C I D Continuous Drain Current T = 100C 20 A C 1 I Pulsed Drain Current 173 DM V Gate-Source Voltage 30 V GS E 2 1979 Single Pulse Avalanche Energy mJ AS I 24 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C W 543 D C R Junction to Case Thermal Resistance 0.23 JC C/W R Case to Sink Thermal Resistance, Flat, Greased Surface 0.15 CS T ,T Operating and Storage Junction Temperature Range C -55 150 J STG V V RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) 2500 Isolation oz 1.03 W T Package Weight g 29.2 inlbf 10 Torque Terminals and Mounting Screws. Nm 1.1 Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT32M80J J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 800 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coef cient 1.41 V/C BR(DSS) J D V = 10V, I =24A R 3 Drain-Source On Resistance 0.16 0.19 DS(on) GS D V Gate-Source Threshold Voltage 3 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 800V T = 25C 100 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 500 GS J V = 30V I Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 24A 43 fs Forward Transconductance S DS D C Input Capacitance 9326 iss V = 0V, V = 25V GS DS C 159 Reverse Transfer Capacitance rss f = 1MHz C Output Capacitance 927 oss pF 4 C Effective Output Capacitance, Charge Related 438 o(cr) V = 0V, V = 0V to 533V GS DS 5 C Effective Output Capacitance, Energy Related 217 o(er) Q Total Gate Charge 303 g V = 0 to 10V, I = 24A, GS D Q Gate-Source Charge 51 nC gs V = 400V DS Q Gate-Drain Charge gd 155 t Resistive Switching Turn-On Delay Time 53 d(on) t V = 533V, I = 24A Current Rise Time 76 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 231 d(off) G GG t Current Fall Time 67 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 32 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I SM 173 (body diode) 1 (Body Diode) V I = 24A, T = 25C, V = 0V Diode Forward Voltage 1.0 V SD SD J GS 3 t I = 24A, V = 100V Reverse Recovery Time 1000 ns rr SD DD Q di /dt = 100A/s, T = 25C Reverse Recovery Charge 20 C rr SD J I 24A, di/dt 1000A/s, V = 100V, SD DD dv/dt Peak Recovery dv/dt 10 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 6.9mH, R = 25, I = 24A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -8.27E-7/V 2 + 1.01E-7/V + 1.43E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8168 Rev C 7-2011