APT39M60J 600V, 42A, 0.11 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low CMille capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure UL Recognize help control slew rates during switching, resulting in low EMI and reliable paralleling, file E145592 IS OTO P even when switching at very high frequency. Reliability in yback, boost, forward, and D APT39M60J other circuits is enhanced by the high avalanche energy capability. Single die MOSFET G S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI/RFI PFC and other boost converter Low R Buck converter DS(on) Ultra low C for improved noise immunity Two switch forward (asymmetrical bridge) rss Low gate charge Single switch forward Avalanche energy rated Flyback RoHS compliant Inverters Absolute Maximum Ratings Ratings Symbol Parameter Unit Continuous Drain Current T = 25C 42 C I D Continuous Drain Current T = 100C 26 A C 1 I 210 Pulsed Drain Current DM V 30 Gate-Source Voltage V GS E 2 1580 Single Pulse Avalanche Energy mJ AS I 28 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C W 480 D C R Junction to Case Thermal Resistance 0.26 JC C/W R Case to Sink Thermal Resistance, Flat, Greased Surface CS 0.15 T ,T C Operating and Storage Junction Temperature Range -55 150 J STG V V RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 Isolation oz 1.03 W T Package Weight g 29.2 inlbf 10 Torque Terminals and Mounting Screws. Nm 1.1 Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT39M60J J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250 A Drain-Source Breakdown Voltage 600 V BR(DSS) GS D V /T Reference to 25C, I = 250 A Breakdown Voltage Temperature Coef cient 0.57 V/C BR(DSS) J D V = 10V, I = 28A R 3 Drain-Source On Resistance 0.09 0.11 DS(on) GS D V Gate-Source Threshold Voltage 3 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 600V T = 25C 100 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 500 GS J I V = 30V Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 28A fs Forward Transconductance 55 S DS D C Input Capacitance 11300 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 115 rss f = 1MHz C Output Capacitance 1040 oss pF 4 C Effective Output Capacitance, Charge Related 550 o(cr) V = 0V, V = 0V to 400V GS DS 5 C Effective Output Capacitance, Energy Related 285 o(er) Q Total Gate Charge 280 g V = 0 to 10V, I = 28A, GS D Q Gate-Source Charge 60 nC gs V = 300V DS Q Gate-Drain Charge gd 120 t Resistive Switching Turn-On Delay Time 65 d(on) t V = 400V, I = 28A Current Rise Time 75 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 190 d(off) G GG t Current Fall Time 60 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D MOSFET symbol I S 42 showing the (Body Diode) integral reverse p-n A G Pulsed Source Current junction diode I SM 210 (body diode) 1 S (Body Diode) V I = 28A, T = 25C, V = 0V Diode Forward Voltage 1.0 V SD SD J GS 3 t I = 28A Reverse Recovery Time 745 ns rr SD Q di /dt = 100A/s, T = 25C Reverse Recovery Charge 19 C rr SD J I 28A, di/dt 1000A/ s, V = 100V, SD DD V/ns dv/dt Peak Recovery dv/dt 8 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 4.03mH, R = 25, I = 28A. J G AS 3 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -1.10E-7/V 2 + 4.60E-8/V + 1.72E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8087 Rev F 7-2011