X-On Electronics has gained recognition as a prominent supplier of APT5010JFLL Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. APT5010JFLL Discrete Semiconductor Modules are a product manufactured by Microchip. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

APT5010JFLL Microchip

APT5010JFLL electronic component of Microchip
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See Product Specifications
Part No.APT5010JFLL
Manufacturer: Microchip
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules FG, FREDFET, 500V, 0.10_OHM, SOT-227
Datasheet: APT5010JFLL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 40.502 ea
Line Total: USD 40.5 
Availability - 3
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 51.85
5 : USD 50.05
10 : USD 49.3
25 : USD 48.5625
50 : USD 47.825
100 : USD 42.375
250 : USD 41.7375

3
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 40.502
100 : USD 37.367

   
Manufacturer
Product Category
Technology
Polarisation
Kind Of Channel
Mounting
Electrical Mounting
Semiconductor Structure
Case
Type Of Module
Drain Current
Pulsed Drain Current
Power Dissipation
On-State Resistance
Drain-Source Voltage
Gate-Source Voltage
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We are delighted to provide the APT5010JFLL from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APT5010JFLL and other electronic components in the Discrete Semiconductor Modules category and beyond.

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APT5010JFLL 500V 41A 0.100 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT sUL Recognize ISOTOP patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5010JFLL UNIT V 500 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 41 D C Amps 1 I Pulsed Drain Current 164 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 378 C P D Linear Derating Factor W/C 3.03 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 41 AR 1 E Repetitive Avalanche Energy 35 AR mJ 4 E Single Pulse Avalanche Energy 1600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 20.5A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5010JFLL Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 4360 iss GS V = 25V C pF Output Capacitance DS 895 oss f = 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 Total Gate Charge V = 10V 95 g GS V = 300V Q nC Gate-Source Charge DD 24 gs I = 41A 25C D Q Gate-Drain Mille) Charge 50 gd RESISTIVE SWITCHING t 11 Turn-on Delay Time d(on) V = 15V GS t 13 Rise Time r ns V = 300V DD t 25 Turn-off Delay Time d(off) I = 41A 25C D t R = 0.6 Fall Time 3 f G INDUCTIVE SWITCHING 25C 6 E 485 Turn-on Switching Energy on V = 333V, V = 15V DD GS E Turn-off Switching Energy I = 41A, R = 5 455 off D G J INDUCTIVE SWITCHING 125C 6 E 755 Turn-on Switching Energy on V = 333V V = 15V DD GS E Turn-off Switching Energy I = 41A, R = 5 530 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) I S 41 Amps 1 I (Body Diode) Pulsed Source Current SM 164 2 V Diode Forward Voltage (V = 0V, I = -41A) Volts SD GS S 1.3 dv dv 5 Peak Diode Recovery / / V/ns dt dt 15 Reverse Recovery Time T = 25C 280 j t rr ns di (I = -41A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.28 j C Q di rr (I = -41A, / = 100A/s) S dt T = 125C 6.41 j Peak Recovery Current T = 25C 15.7 j I Amps RRM di (I = -41A, / = 100A/s) S dt T = 125C 23.6 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case R 0.33 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.65mH, R = 25, Peak I = 41A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 41A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 2 0.05 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7029 Rev E 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM

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