APT5010JLL 500V 41A 0.100 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses gUL Recognize along with exceptionally fast switching speeds inherent with APT s ISOTOP patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5010JLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 41 D C Amps 1 I Pulsed Drain Current 164 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 378 C P D Linear Derating Factor W/C 3.03 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 41 AR 1 E Repetitive Avalanche Energy 35 AR mJ 4 E Single Pulse Avalanche Energy 1600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 20.5A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5010JLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 4360 iss V = 0V GS C Output Capacitance 895 V = 25V oss DS pF f = 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 Total Gate Charge V = 10V 95 g GS V = 250V Q DD Gate-Source Charge 24 gs nC I = 41A 25C D Q Gate-Drain Mille) Charge 50 gd RESISTIVE SWITCHING t Turn-on Delay Time 11 d(on) = 15V V GS t Rise Time 13 r = 250V V DD ns = 41A 25C t I 25 Turn-off Delay Time D d(off) = 0.6 R G t Fall Time 3 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 485 on V = 333V, V = 15V DD GS E I = 41A, R = 5 Turn-off Switching Energy 455 D G off INDUCTIVE SWITCHING 125C J E 6 755 Turn-on Switching Energy on V = 330V, V = 15V DD GS E I = 41A, R = 5 Turn-off Switching Energy 530 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 41 Continuous Source Current (Body Diode) S Amps I 1 Pulsed Source Current (Body Diode) 164 SM 2 V Diode Forward Voltage (V = 0V, I = -41A) Volts SD 1.3 GS S t Reverse Recovery Time (I = -41A, dl /dt = 100A/s) ns 608 rr S S Q Reverse Recovery Charge (I = -41A, dl /dt = 100A/s) C 11.0 rr S S dv dv 5 V/ns / Peak Diode Recovery / dt dt 8 THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.33 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.90mH, R = 25, Peak I = 41A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 41A / 700A/s V V T 150C S D dt R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 2 0.05 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7018 Rev F 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM