APT5010JLLU2 V = 500V DSS ISOTOP Boost chopper R = 100m max Tj = 25C DSon MOSFET Power Module I = 41A Tc = 25C D K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 7 MOSFETs - Low R G DSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated S - Very rugged ISOTOP Package (SOT-227) Very low stray inductance High level of integration K S Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) D G Low junction to case thermal resistance Very rugged Low profile RoHS Compliant ISOTOP Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 500 V DSS T = 25C 41 c I Continuous Drain Current D A T = 80C 30 c I Pulsed Drain current 164 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 100 m DSon P Maximum Power Dissipation T = 25C 378 W D c I Avalanche current (repetitive and non repetitive) 41 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 1600 AS IF Maximum Average Forward Current Duty cycle=0.5 Tc = 80C 30 AV A IF RMS Forward Current (Square wave, 50% duty) 39 RMS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1 8 www.microsemi.com APT5010JLLU2 Rev 2 October 2012 APT5010JLLU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 500V T = 25C 100 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 400V T = 125C 500 GS DS j R Drain Source on Resistance V = 10V, I = 23A 100 m DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 3 5 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 4360 iss V = 0V GS C Output Capacitance V = 25V 894 pF DS oss f = 1MHz C Reverse Transfer Capacitance 60 rss Q Total gate Charge 96 g V = 10V GS Q Gate Source Charge V = 250V 24 nC gs Bus I = 41A T =25C D J Q Gate Drain Charge 49 gd Resistive switching 25C T Turn-on Delay Time 11 d(on) V = 15V GS T Rise Time 15 r V = 250V ns Bus T Turn-off Delay Time 25 d(off) I = 41A T =25C D J T Fall Time 3 R = 0.6 f G Inductive Switching 25C Turn-on Switching Energy 543 E on V = 330V, V =15V J bus GS Turn-off Switching Energy 509 E off I =46A, R =5 D G Inductive Switching 125C Turn-on Switching Energy 843 E on V = 330V, V =15V J bus GS Turn-off Switching Energy 593 E off I =46A, R =5 D G Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 30A 1.6 1.8 F V Diode Forward Voltage V I = 60A 1.9 F F I = 30A T = 125C 1.4 F j V = 600V T = 25C 250 R j I Maximum Reverse Leakage Current A RM V = 600V T = 125C 500 R j C Junction Capacitance V = 200V 44 pF T R I =1A,V =30V F R Reverse Recovery Time T = 25C 23 j di/dt =100A/s t ns rr T = 25C 85 j Reverse Recovery Time T = 125C 160 j I = 30A F T = 25C 4 j I Maximum Reverse Recovery Current A RRM V = 400V R T = 125C 8 j di/dt =200A/s T = 25C 130 j Q Reverse Recovery Charge nC rr T = 125C 700 j t Reverse Recovery Time I = 30A 70 ns rr F V = 400V T = 125C Q Reverse Recovery Charge R j 1300 nC rr di/dt =1000A/s I Maximum Reverse Recovery Current 30 A RRM 2 8 www.microsemi.com APT5010JLLU2 Rev 2 October 2012