APT5010B2FLL APT5010LFLL 500V 46A 0.100 R B2FLL POWER MOS 7 FREDFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LFLL patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5010B2FLL LFLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 46 D C Amps 1 I Pulsed Drain Current 184 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 520 C P D Linear Derating Factor W/C 4.0 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 50 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 1600 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 23A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.APT5010B2FLL LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C V = 0V Input Capacitance 4360 iss GS V = 25V C pF Output Capacitance 895 DS oss f= 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 V = 10V Total Gate Charge 95 g GS V = 250V Q nC Gate-Source Charge DD 24 gs I = 46A 25C Q D 50 Gate-Drain Mille) Charge gd RESISTIVE SWITCHING t Turn-on Delay Time 11 d(on) V =15V GS t 15 Rise Time r V =250V ns DD t Turn-off Delay Time 25 d(off) I =46A 25C D t R =0.6 Fall Time 3 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 545 on V =333V, V = 15V DD GS E Turn-off Switching Energy I =46A, R =5 510 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 845 on V =333V V = 15V DD GS E Turn-off Switching Energy I =46A, R =5 595 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) S 46 Amps 1 I Pulsed Source Current (Body Diode) SM 184 2 V Diode Forward Voltage (V = 0V, I = -46A) 1.3 Volts SD GS S dv 5 dv / Peak Diode Recovery / V/ns dt dt 15 Reverse Recovery Time T = 25C 280 j t ns rr di (I = -46A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.28 j C Q rr di (I = -46A, / = 100A/s) S dt T = 125C 6.41 j Peak Recovery Current T = 25C 15.7 j I Amps RRM di (I = -46A, / = 100A/s) S dt T = 125C 23.6 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.25 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4Starting T = +25C, L = 1.51mH, R =25 , Peak I = 46A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 46A / 700A/s V 500V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.30 0.9 0.25 0.20 0.7 0.15 0.5 Note: t 1 0.3 0.10 t 2 0.1 t 1 Duty Factor D = / t 0.05 2 SINGLE PULSE 0.05 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION