APT50M65JFLL 500V 58A 0.065 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT sUL Recognize ISOTOP patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50M65JFLL UNIT V 500 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 58 D C Amps 1 I Pulsed Drain Current 232 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 520 C P D Linear Derating Factor W/C 4.16 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 58 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 29A) 0.065 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50M65JFLL Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 7010 iss GS V = 25V C pF Output Capacitance DS 1390 oss f = 1 MHz C Reverse Transfer Capacitance 87 rss Q 3 Total Gate Charge V = 10V 141 g GS V = 250V Q nC Gate-Source Charge DD 40 gs I = 67A 25C D Q Gate-Drain Mille) Charge 70 gd RESISTIVE SWITCHING t 12 Turn-on Delay Time d(on) V = 15V GS t 28 Rise Time r ns V = 250V DD t 29 Turn-off Delay Time d(off) I = 67A 25C D t R = 0.6 Fall Time 30 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 1035 on V = 333V, V = 15V DD GS E Turn-off Switching Energy I = 67A, R = 3 845 off D G J INDUCTIVE SWITCHING 125C 6 E 1556 Turn-on Switching Energy on V = 333V V = 15V DD GS E Turn-off Switching Energy I = 67A, R = 3 1013 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 58 Amps I 1 (Body Diode) SM Pulsed Source Current 232 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -67A) 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns dt 15 dt Reverse Recovery Time T = 25C 270 j t rr ns di (I = -67A, / = 100A/s) S dt T = 125C 540 j Reverse Recovery Charge T = 25C 2.6 j C Q rr di (I = -67A, / = 100A/s) S dt T = 125C 9.6 j Peak Recovery Current T = 25C 17 j I Amps RRM di (I = -67A, / = 100A/s) S dt T = 125C 31 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.24 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.78mH, R = 25 , Peak I = 58A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -58A / 700A/s V 500V T 150C dt S R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 0.05 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7032 Rev D 12-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM