APT50M75JLL 500V 51A 0.075 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses gUL Recognize along with exceptionally fast switching speeds inherent with APT s ISOTOP patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50M75JLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 51 D C Amps 1 I Pulsed Drain Current 204 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 460 P D Linear Derating Factor W/C 3.68 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 51 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 25.5A) 0.075 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50M75JLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 5590 iss V = 0V GS C Output Capacitance V = 25V 1180 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 85 rss 3 Q Total Gate Charge V = 10V 125 g GS V = 250V Q DD Gate-Source Charge nC 33 gs I = 51A 25C D Q Gate-Drain Mille) Charge 65 gd RESISTIVE SWITCHING t Turn-on Delay Time 8 d(on) V = 15V GS t Rise Time 17 r V = 250V DD ns t I = 51A 25C Turn-off Delay Time D 21 d(off) R = 0.6 G t Fall Time 3 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 675 on V = 333V, V = 15V DD GS I = 51A, R = 5 E Turn-off Switching Energy 650 D G off J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 1110 on V = 333V V = 15V DD GS E I = 51A, R = 5 Turn-off Switching Energy 755 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 51 Continuous Source Current (Body Diode) S Amps I 1 228 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -51A) Volts SD GS S t 655 Reverse Recovery Time (I = -51A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -51A, dl /dt = 100A/s) 13.5 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.27 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.92mH, R = 25, Peak I = 51A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 51A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 0.9 0.25 0.20 0.7 0.15 0.5 Note: t 0.10 1 0.3 t 2 t 0.05 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7001 Rev E 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM