APT50N60JCCU2 V = 600V DSS ISOTOP Boost chopper R = 45m max Tj = 25C DSon Super Junction I = 50A Tc = 25C D MOSFET Power Module Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch D Features G - Ultra low R DSon - Low Miller capacitance - Ultra low gate charge S - Avalanche energy rated SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior K S - Positive temperature coefficient on VF ISOTOP Package (SOT-227) Very low stray inductance D G High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 600 V DSS T = 25C 50 c I Continuous Drain Current D T = 80C 38 A c I Pulsed Drain current 130 DM V Gate - Source Voltage 20 V GS R Drain - Source ON Resistance 45 DSon m P Maximum Power Dissipation T = 25C 290 W D c I Avalanche current (repetitive and non repetitive) 15 A AR E Repetitive Avalanche Energy 3 AR mJ E Single Pulse Avalanche Energy 1900 AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. 1-4 www.microsemi.com APT50N60JCCU2 Rev 3 October, 2012 APT50N60JCCU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 600V T = 25C 250 GS DS j I Zero Gate Voltage Drain Current A DSS V = 0V,V = 600V T = 125C 500 GS DS j R Drain Source on Resistance DS(on) V = 10V, I = 22.5A 40 45 m GS D V Gate Threshold Voltage V = V , I = 3mA 2.1 3 3.9 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 6.8 iss V = 0V V = 25V GS DS nF C Output Capacitance f = 1MHz 0.32 oss Q Total gate Charge 150 g V = 10V GS Q Gate Source Charge 34 V = 300V nC gs Bus I = 44A D Q Gate Drain Charge 51 gd T Turn-on Delay Time 30 d(on) Tj=25C V = 10V GS T Rise Time 20 r V = 400V ns Bus T Turn-off Delay Time 100 d(off) I = 44A D R = 3.3 T Fall Time 20 f G Tj=25C E Turn-on Switching Energy 405 on V = 10V V = 400V J GS Bus E Turn-off Switching Energy 520 off I = 44A R = 3.3 D G Tj=125C E Turn-on Switching Energy 660 on V = 10V V = 400V J GS Bus E Turn-off Switching Energy 635 off I = 44A R = 3.3 D G V V Diode Forward Voltage V = 0V, I = - 44A 0.9 1.2 SD GS S I = - 44A S t Reverse Recovery Time T = 25C 600 ns rr j V = 400V R Q Reverse Recovery Charge T = 25C 17 C rr j di /dt = 100A/s S SiC chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 100 400 j I Maximum Reverse Leakage Current V =600V A RM R T = 175C 200 2000 j 50% duty cycle I Maximum Average Forward Current Tc = 125C 20 A F(AV) T = 25C 1.6 1.8 j V Diode Forward Voltage I = 20A V F F T = 175C 2 2.4 j I = 20A, V = 300V F R Q Total Capacitive Charge 28 nC C di/dt =800A/s f = 1MHz, V = 200V 130 R Q Total Capacitance pF f = 1MHz, V = 400V 100 R 2-4 www.microsemi.com APT50N60JCCU2 Rev 3 October, 2012