APT58M50JU2 Microchip

APT58M50JU2 V = 500V DSS ISOTOP Boost chopper R = 65m Max Tj = 25C DSon MOSFET Power Module I = 58A Tc = 25C D Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFETs G - Low R DSon - Low input and Miller capacitance - Low gate charge S - Avalanche energy rated - Very rugged ISOTOP Package (SOT-227) Very low stray inductance High level of integration K S Benefits Outstanding performance at high frequency operation D G Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 500 V DSS T = 25C 58 c I Continuous Drain Current D A T = 80C 43 c I Pulsed Drain current 270 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 65 m DSon P Maximum Power Dissipation T = 25C 543 W D c I Avalanche current (repetitive and non repetitive) 42 A AR These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. 1-6 www.microsemi.com APT58M50JU2 Rev 1 October, 2012 APT58M50JU2 All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 500V T = 25C 250 j DS I Zero Gate Voltage Drain Current A DSS V = 0V GS T = 125C 1000 j R Drain Source on Resistance V = 10V, I = 42A DS(on) GS D 65 m V Gate Threshold Voltage V = V , I = 2.5mA 3 4 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V 100 nA GSS GS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 10800 V = 0V iss GS V = 25V pF C Output Capacitance 1164 oss DS f = 1MHz C Reverse Transfer Capacitance 148 rss Q Total gate Charge 340 g V = 10V GS Q Gate Source Charge V = 250V 75 nC gs Bus I = 42A D Q Gate Drain Charge 155 gd T Turn-on Delay Time Resistive switching 25C 60 d(on) V = 15V GS T Rise Time 70 r V = 333V ns Bus T Turn-off Delay Time 155 d(off) I = 42A D R = 2.2 T Fall Time G 50 f Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25C 25 j I Maximum Reverse Leakage Current V =600V A RM R T = 125C 500 j I DC Forward Current Tc = 90C 30 A F I = 30A 1.8 2.2 F V Diode Forward Voltage I = 60A 2.2 V F F I = 30A T = 125C 1.5 F j T = 25C 25 j t Reverse Recovery Time ns rr I = 30A F T = 125C 160 j V = 400V R T = 25C 35 di/dt =200A/s j Q Reverse Recovery Charge nC rr T = 125C 480 j Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Mosfet 0.23 R Junction to Case Thermal Resistance thJC C/W Diode 1.05 R Junction to Ambient (IGBT & Diode) 20 thJA V RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V ISOL T ,T Storage Temperature Range -40 150 J STG C T Max Lead Temp for Soldering:0.063 from case for 10 sec 300 L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g 2-6 www.microsemi.com APT58M50JU2 Rev 1 October, 2012