APTC60AM18SCG V = 600V DSS Phase leg Series & SiC parallel diodes R = 18m max Tj = 25C Super Junction MOSFET Power Module DSon I = 143A Tc = 25C D VBUS Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 G1 Features OUT CoolMOS S1 - Ultra low R DSon - Low Miller capacitance Q2 - Ultra low gate charge G2 - Avalanche energy rated 0/VBUS Parallel SiC Schottky Diode S2 - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 600 V DSS T = 25C 143 c I Continuous Drain Current D T = 80C 107 A c I Pulsed Drain current 572 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 18 m DSon P Maximum Power Dissipation T = 25C 833 W D c I Avalanche current (repetitive and non repetitive) 20 A AR E Repetitive Avalanche Energy 1 AR mJ E Single Pulse Avalanche Energy 1800 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 8 www.microsemi.com APTC60AM18SCG Rev 4 November, 2013 APTC60AM18SCG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V,V = 600V 100 A GS DS DSS R Drain Source on Resistance V = 10V, I = 71.5A 18 m DS(on) GS D V Gate Threshold Voltage V = V , I = 4mA 2.1 3 3.9 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 400 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 28 iss V = 0V GS C Output Capacitance V = 25V 10.2 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.85 rss Q Total gate Charge 1036 g V = 10V GS Q Gate Source Charge V = 300V 116 nC gs Bus I = 143A D Q Gate Drain Charge 444 gd T Turn-on Delay Time 21 Inductive switching 125C d(on) V = 15V GS T Rise Time 30 r V = 400V ns Bus T Turn-off Delay Time 283 d(off) I = 143A D T Fall Time R = 1.2 84 G f Inductive switching 25C Eon Turn-on Switching Energy 1608 V = 15V, V = 400V J GS Bus Eoff Turn-off Switching Energy 3920 I = 143A, R = 1.2 D G Inductive switching 125C Eon Turn-on Switching Energy 2630 V = 15V, V = 400V J GS Bus Eoff Turn-off Switching Energy 4824 I = 143A, R = 1.2 D G R Junction to Case Thermal Resistance 0.15 C/W thJC Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM I Maximum Reverse Leakage Current V = 600V 150 A RM R I DC Forward Current Tc = 80C 200 A F I = 200A T = 25C 1.6 2 F j V Diode Forward Voltage V F V = 0V GE T = 150C 1.5 j T = 25C 125 j t Reverse Recovery Time ns rr T = 150C 220 j I = 200A F T = 25C 9.4 j Q Reverse Recovery Charge V = 300V C rr R T = 150C 19.8 j di/dt =2800A/s T = 25C 2.2 j E Reverse Recovery Energy mJ r T = 150C 4.8 j R Junction to Case Thermal Resistance 0.39 C/W thJC 2 8 www.microsemi.com APTC60AM18SCG Rev 4 November, 2013