Product Information

APTDF200H60G

APTDF200H60G electronic component of Microchip

Datasheet
Discrete Semiconductor Modules Power Module - Diode
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 143.8944 ea
Line Total: USD 143.89

80 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
62 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

APTDF200H60G
Microchip

1 : USD 135.493
10 : USD 135.24
25 : USD 130.6515
100 : USD 113.183

Read More Specifications

     
Manufacturer
Product Category
Technology
Case
Mechanical Mounting
Version
Electrical Mounting
Kind Of Package
Leads
Type Of Semiconductor Component
Max. Forward Impulse Current
Max. Forward Voltage
Max. Off-State Voltage
Load Current
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Additional Infomation About Product

APTDF200H60G Diode Full Bridge V = 600V RRM I = 200A Tc = 80C Power Module C Application + Uninterruptible Power Supply (UPS) Induction heating Welding equipment AC1 AC2 High speed rectifiers Features Ultra fast recovery times Soft recovery characteristics High blocking voltage - High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 600 V V Maximum Peak Repetitive Reverse Voltage RRM T = 25C 270 C Maximum Average Forward I Duty cycle = 50% F(AV) Current T = 80C 200 C A I RMS Forward Current Duty cycle = 50% T = 45C 270 F(RMS) C I Non-Repetitive Forward Surge Current 8.3ms T = 45C 1500 C FSM These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-5 www.microsemi.com APTDF200H60G Rev 2 October, 2012 APTDF200H60G Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 200A 1.6 2.0 F V Diode Forward Voltage I = 400A 2.0 V F F I = 200A T = 125C 1.3 F j T = 25C 350 j I Maximum Reverse Leakage Current V = 600V A RM R T = 125C 600 j C Junction Capacitance V = 600V 380 pF T R Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I =1A,V =30V F R t Reverse Recovery Time T = 25C 34 ns rr j di/dt = 200A/s T = 25C 160 j t Reverse Recovery Time ns rr T = 125C 220 j I = 200A F T = 25C 580 j Q Reverse Recovery Charge V = 400V nC rr R T = 125C 3060 j di/dt = 400A/s T = 25C 10 j I Reverse Recovery Current A RRM T = 125C 26 j t Reverse Recovery Time 100 ns rr I = 200A F Q Reverse Recovery Charge V = 400V T = 125C 5.78 C j rr R di/dt = 2000A/s A I Reverse Recovery Current 88 RRM Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.285 C/W thJC V RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V ISOL T Operating junction temperature range -40 175 J C T Storage Temperature Range -40 125 STG T Operating Case Temperature -40 100 C To heatsink M6 3 5 Torque Mounting torque N.m For terminals M5 2 3.5 g Wt Package Weight 300 2-5 www.microsemi.com APTDF200H60G Rev 2 October, 2012

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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Microsemi Commercial Components Group
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Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
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MICROSEMI/LAWRENCE
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MSC
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