APTDF450U60G Microchip

APTDF450U60G V = 600V Single diode CES I = 450A Tc = 80C C Power Module Application Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles Features Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current Benefits Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 600 V V Maximum Peak Repetitive Reverse Voltage RRM T = 25C 500 Maximum Average Forward c I Duty cycle = 50% F(AV) Current T = 80C 450 c A I RMS Forward Current 850 F(RMS) T = 25C I Non-Repetitive Forward Surge Current 5000 FSM j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-4 www.microsemi.com APTDF450U60G Rev 2 October, 2012 APTDF450U60G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 500A 1.4 1.8 F V Diode Forward Voltage I = 1000A 1.7 V F F I = 500A T = 150C 1.5 F j T = 25C 2500 j I Maximum Reverse Leakage Current V = 600V A RM R T = 150C 5000 j C Junction Capacitance V = 200V 825 pF T R Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I =1A,V =30V F R t T = 25C 60 75 rr1 j di/dt = 15A/s Reverse Recovery Time ns I = 500A t TF = 25C 90 115 rr2 j V = 350V R t T = 100C 135 255 rr3 j di/dt=1000A/s t T = 25C 135 fr1 j Forward Recovery Time ns t T = 100C 135 fr2 j I T = 25C 35 50 RRM1 j Reverse Recovery Current A I T = 100C 55 70 RRM2 j I = 500A F Q T = 25C 1575 2875 rr1 j Reverse Recovery Charge V = 350V nC R Q T = 100C 3715 8925 rr2 di/dt=1000A/s j V T = 25C 23 fr1 j Forward Recovery Voltage V V T = 100C 23 fr2 j T = 25C 600 j A/s d Rate of Fall of Recovery Current IM/dt T = 100C 400 j Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.08 C/W thJC RMS Isolation Voltage, any terminal to case V 4000 V ISOL t =1 min, 50/60Hz T Operating junction temperature range -40 150 J C T Storage Temperature Range -40 125 STG T Operating Case Temperature -40 100 C To heatsink M5 2.5 3.5 Torque Mounting torque N.m For terminals M6 3 4 Wt Package Weight 250 g 2-4 www.microsemi.com APTDF450U60G Rev 2 October, 2012