APTDF60H601G Microchip

APTDF60H601G Fast Diode Full Bridge V = 600V RRM I = 60A Tc = 90C Power Module C 3 4 Application Uninterruptible Power Supply (UPS) CR1 CR3 Induction heating Welding equipment 5 1 High speed rectifiers 6 2 Features CR2 CR4 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current 798 10 Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All multiple inputs and outputs must be shorted together 3/4 5/6 7/8 1/2 9/10 Absolute maximum ratings Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 600 V V Maximum Peak Repetitive Reverse Voltage RRM T = 25C 92 Maximum Average Forward C I Duty cycle = 50% F(AV) Current T = 90C 60 A C T = 45C I Non-Repetitive Forward Surge Current 8.3ms 500 J FSM These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-5 www.microsemi.com APTDF60H601G Rev 1 October, 2012 APTDF60H601G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I = 60A 1.7 2.3 F V Diode Forward Voltage I = 120A 2 V F F I = 60A T = 125C 1.4 F j T = 25C 25 j I Maximum Reverse Leakage Current V = 600V A RM R T = 125C 500 j C Junction Capacitance V = 200V 145 pF T R Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 70 j t Reverse Recovery Time ns rr T = 125C 140 j I = 60A F T = 25C 100 j Q Reverse Recovery Charge nC rr V = 400V R T = 125C 690 j di/dt = 200A/s T = 25C 4 j I Reverse Recovery Current A RRM T = 125C 9 j t Reverse Recovery Time 80 ns rr I = 60A F V = 400V T = 125C nC Q Reverse Recovery Charge R j 1540 rr di/dt=1000A/s A I Reverse Recovery Current 31 RRM Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.85 C/W thJC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz V 4000 V ISOL T Operating junction temperature range -40 175 J C T Storage Temperature Range -40 125 STG T Operating Case Temperature -40 100 C Torque Mounting torque To heatsink M4 2 3 N.m g Wt Package Weight 80 2-5 www.microsemi.com APTDF60H601G Rev 1 October, 2012