APTM100UM45DAG V = 1000V Single switch DSS R = 45m typ Tj = 25C DSon with Series diode I = 215A Tc = 25C D MOSFET Power Module SK Application Zero Current Switching resonant mode SD Features Power MOS 7 MOSFETs - Low R DSon - Low input and Miller capacitance - Low gate charge G DK - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 1000 V DSS T = 25C 215 c I Continuous Drain Current D T = 80C 160 A c I Pulsed Drain current 860 DM V Gate - Source Voltage 30 V GS R Drain - Source ON Resistance 52 m DSon P Maximum Power Dissipation T = 25C 5000 W D c I Avalanche current (repetitive and non repetitive) 30 A AR E Repetitive Avalanche Energy 50 AR mJ E Single Pulse Avalanche Energy 3200 AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1 7 www.microsemi.com APTM100UM45DAG Rev 4 October, 2012 APTM100UM45DAG All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 1000V T = 25C j 600 A GS DS I Zero Gate Voltage Drain Current DSS mA V = 0V,V = 800V T = 125C 3 GS DS j R Drain Source on Resistance V = 10V, I = 107.5A DS(on) GS D 45 52 m V Gate Threshold Voltage V = V , I = 30mA 3 5 V GS(th) GS DS D I Gate Source Leakage Current V = 30 V, V = 0V 600 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 42.7 iss V = 0V GS C Output Capacitance V = 25V 7.6 nF DS oss f = 1MHz C Reverse Transfer Capacitance 1.3 rss Q Total gate Charge 1602 g V = 10V GS Q Gate Source Charge V = 500V 204 nC gs Bus I = 215A D Q Gate Drain Charge 1038 gd Inductive switching 125C T Turn-on Delay Time 18 d(on) V = 15V GS T Rise Time 14 r V = 670V ns Bus T Turn-off Delay Time 140 d(off) I = 215A D T Fall Time 55 R = 0.5 f G Inductive switching 25C E Turn-on Switching Energy 7.2 on V = 15V, V = 670V mJ GS Bus E Turn-off Switching Energy 4.3 off I = 215A, R = 0.5 D G Inductive switching 125C E Turn-on Switching Energy 12 on V = 15V, V = 670V mJ GS Bus E Turn-off Switching Energy 5.8 off I = 215A, R = 0.5 D G Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Maximum Repetitive Reverse Voltage V 1200 V RRM T = 25C 600 j I Maximum Reverse Leakage Current V =1200V A RM R T = 125C 2000 j T = 80C I DC Forward Current 360 A F j I = 360A 2.5 3 F V Diode Forward Voltage I = 720A 3 V F F I = 360A T = 125C 1.8 F j T = 25C 265 j t Reverse Recovery Time ns rr I = 360A F T = 125C 350 j V = 800V R di/dt = 1200A/s T = 25C 3.3 j Q Reverse Recovery Charge C rr T = 125C 17.3 j 2 7 www.microsemi.com APTM100UM45DAG Rev 4 October, 2012