APTMC120AM09CT3AG Microchip

APTMC120AM09CT3AG V = 1200V DSS Phase leg R = 9m max Tj = 25C DSon SiC MOSFET Power Module I = 295A* Tc = 25C D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features SiC Power MOSFET - High speed switching - Low R DS(on) - Ultra low loss SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 25 to 28 must be shorted together Pins 13 to 16 must be shorted together Pins 16/18/19/20 must be shorted together All ratings T = 25C unless otherwise specified j These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-8 www.microsemi.com APTMC120AM09CT3AG Rev 0 May, 2014 APTMC120AM09CT3AG Absolute maximum ratings (per SiC MOSFET) Symbol Parameter Max ratings Unit V Drain - Source Voltage 1200 V DSS T = 25C 295* c I Continuous Drain Current D T = 80C 220* A c I Pulsed Drain current 590 DM V Gate - Source Voltage -10/25V V GS R Drain - Source ON Resistance 9 m DSon P Maximum Power Dissipation T = 25C 1250 W D c * Specification of device but current must be limited due to size of pins. Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V , V = 1200V 400 A DSS GS DS T = 25C 6.25 9 V = 20V j GS R Drain Source on Resistance m DS(on) I = 200A T = 150C 11 16 D j V Gate Threshold Voltage V = V , I = 40mA 2.1 2.4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 2.4 A GSS GS DS Dynamic Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 11 iss V = 0V GS C Output Capacitance V = 1000V 0.88 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.06 rss Q Total gate Charge 644 g V = -5/+20V GS Q Gate Source Charge 184 V = 800V nC gs Bus I = 200A D Q Gate Drain Charge 200 gd T Turn-on Delay Time 35 d(on) V = -5/+20V GS T Rise Time 40 r V = 800V Bus ns I =200A T =150C T Turn-off Delay Time D J 150 d(off) R = 4 R = 5 L Gext T Fall Time 70 f Inductive Switching E Turn on Energy T = 150C 4.4 on V = -5/+20V j GS V = 600V mJ Bus I = 200A D E Turn off Energy T = 150C 2.4 off j R = 5 Gext R Internal gate resistance 1.5 Gint R Junction to Case Thermal Resistance 0.1 C/W thJC Source - Drain diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit V = -5V, I = 100A 3.3 GS SD V Diode Forward Voltage V SD V = -2V, I = 100A 3.1 GS SD t Reverse Recovery Time 45 ns rr I = 200A V = -5V SD GS Q Reverse Recovery Charge 1.62 C rr V = 800V di /dt = 4000A/s R F I Reverse Recovery Current 54 A rr 2-8 www.microsemi.com APTMC120AM09CT3AG Rev 0 May, 2014