X-On Electronics has gained recognition as a prominent supplier of AT24CM02-SSHD-B EEPROM across the USA, India, Europe, Australia, and various other global locations. AT24CM02-SSHD-B EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

AT24CM02-SSHD-B Microchip

AT24CM02-SSHD-B electronic component of Microchip
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See Product Specifications
Part No.AT24CM02-SSHD-B
Manufacturer: Microchip
Category: EEPROM
Description: Memory; EEPROM; I2C; 256kx8bit; 2.5÷5.5V; 1MHz; SO8
Datasheet: AT24CM02-SSHD-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
200: USD 2.119 ea
Line Total: USD 423.8 
Availability - 194
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 200  Multiples: 200
Pack Size: 200
Availability Price Quantity
2648
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 4.5125
50 : USD 3.8875
100 : USD 3.8
300 : USD 3.675
500 : USD 3.6375
1000 : USD 3.6
2500 : USD 3.5625
5000 : USD 3.525

26
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 100
100 : USD 3.7297

291
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 100
100 : USD 4.017
500 : USD 3.8857

43
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 3.9247
100 : USD 3.7986
500 : USD 3.7778

194
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 200
Multiples : 200
200 : USD 2.119
400 : USD 2.119

10
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 5.3399
10 : USD 4.6123
30 : USD 4.1796
100 : USD 3.7431
500 : USD 3.542
1000 : USD 3.4502

1914
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.333
100 : USD 3.278
500 : USD 3.278

97
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.858
4 : USD 4.48
10 : USD 4.34
11 : USD 4.228
20 : USD 4.116

291
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 100
100 : USD 4.017
500 : USD 3.8857

2279
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 3.9247
100 : USD 3.7986
500 : USD 3.7778

24
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 11
Multiples : 1
11 : USD 3.9325

97
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 18
Multiples : 1
18 : USD 5.8852

43
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 3.9247

   
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Maximum Clock Frequency
Kind Of Memory
Type Of Integrated Circuit
Operating Voltage
Operating Temperature
Max Number Of Cycles
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AT24CM02-SSHD-B from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AT24CM02-SSHD-B and other electronic components in the EEPROM category and beyond.

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AT24CM02 IC-Compatible (Two-Wire) Serial EEPROM 2Mbit (262,144 x 8) Features Low-Voltage and Standard-Voltage Operation: V = 1.7V to 5.5V CC V = 2.5V to 5.5V CC Internally Organized as 262,144 x 8 (2 Mbit) Industrial Temperature Range: -40C to +85C 2 I C-Compatible (Two-Wire) Serial Interface: 100 kHz Standard Mode, 1.7V to 5.5V 400 kHz Fast Mode, 1.7V to 5.5V 1 MHz Fast Mode Plus (FM+), 2.5V to 5.5V Schmitt Triggers, Filtered Inputs for Noise Suppression Bidirectional Data Transfer Protocol Write-Protect Pin for Full Array Hardware Data Protection Ultra Low Active Current (3 mA maximum) and Standby Current (3 A maximum) 256-byte Page Write Mode: Byte write and partial page writes allowed Random and Sequential Read Modes Self-Timed Write Cycle: All write operations complete within 10 ms maximum Built-in Error Detection and Correction High Reliability: Endurance: 1,000,000 write cycles Data retention: 100 years Green Package Options (Lead-free/Halide-free/RoHS compliant) Die Sale Options: Wafer Form and Bumped Wafers Packages 8-Lead SOIC and 8-Ball WLCSP Datasheet DS20006197C-page 1 2019-2021 Microchip Technology Inc. AT24CM02 Table of Contents Features......................................................................................................................................................... 1 Packages........................................................................................................................................................1 1. Package Types (not to scale)..................................................................................................................4 2. Pin Descriptions...................................................................................................................................... 5 2.1. Device Address Input (A2)........................................................................................................... 5 2.2. Ground......................................................................................................................................... 5 2.3. Serial Data (SDA).........................................................................................................................5 2.4. Serial Clock (SCL)........................................................................................................................5 2.5. Write-Protect (WP)....................................................................................................................... 6 2.6. Device Power Supply................................................................................................................... 6 3. Description.............................................................................................................................................. 7 3.1. System Configuration Using Two-Wire Serial EEPROMs ...........................................................7 3.2. Block Diagram..............................................................................................................................8 4. Electrical Characteristics.........................................................................................................................9 4.1. Absolute Maximum Ratings..........................................................................................................9 4.2. DC and AC Operating Range.......................................................................................................9 4.3. DC Characteristics....................................................................................................................... 9 4.4. AC Characteristics......................................................................................................................10 4.5. Electrical Specifications..............................................................................................................11 5. Device Operation and Communication................................................................................................. 13 5.1. Clock and Data Transition Requirements...................................................................................13 5.2. Start and Stop Conditions.......................................................................................................... 13 5.3. Acknowledge and No-Acknowledge...........................................................................................14 5.4. Standby Mode............................................................................................................................ 14 5.5. Software Reset...........................................................................................................................14 6. Memory Organization............................................................................................................................16 6.1. Device Addressing..................................................................................................................... 16 7. Write Operations................................................................................................................................... 17 7.1. Byte Write...................................................................................................................................17 7.2. Page Write..................................................................................................................................17 7.3. Internal Writing Methodology......................................................................................................18 7.4. Acknowledge Polling.................................................................................................................. 18 7.5. Write Cycle Timing..................................................................................................................... 19 7.6. Write Protection..........................................................................................................................19 8. Read Operations...................................................................................................................................21 8.1. Current Address Read................................................................................................................21 8.2. Random Read............................................................................................................................ 21 8.3. Sequential Read.........................................................................................................................22 DS20006197C-page 2 Datasheet 2019-2021 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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