CDLL5195/TR Microchip

1N5194UR AVAILABLE IN JAN, JANTX AND JANTXV 1N5195UR PER MIL-PRF-19500/118 1N5196UR GENERAL PURPOSE SILICON DIODES CDLL5194 METALLURGICALLY BONDED CDLL5195 CDLL5196 MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Operating Current: 200 mA Derating: 1.2mA/C from 25C to 150C 1.0mA/C from 150C to 175C Forward Current: 650mA MILLIMETERS INCHES DIM MIN MAX MIN MAX D 1.60 1.70 0.063 0.067 F 0.41 0.55 0.016 0.022 ELECTRICAL CHARACTERISTICS 25C, unless otherwise specified G 3.30 3.70 .130 .146 G1 2.54 REF100 REF. V V I I I RM RWM O O FSM TYPE T = +150C T =1/120 S S 0.03 MIN001 MIN. A P T =25C A V V (pk) (pk) mA mA A FIGURE 1 CDLL, 1N5194UR 80 70 200 50 2 CDLL, 1N5195UR 180 180 200 50 2 CDLL, 1N5196UR 250 225 200 50 2 DESIGN DATA CASE: DO-213AA, Hermetically sealed V I at V I at V I at V F R1 RWM R2 RM R3 RWM glass case. (MELF, SOD-80, LL34) TYPE 100mA T =25C T = 150C A A LEAD FINISH: Tin / Lead V dc nA dc A A dc CDLL, 1N5194UR 0.8 - 1.0 25 100 5 THERMAL RESISTANCE: (R ): CDLL, 1N5195UR 0.8 - 1.0 25 100 5 OJEC CDLL, 1N5196UR 0.8 - 1.0 25 100 5 100 C/W maximum THERMAL IMPEDANCE: (Z ): 70 OJX C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: IN5194UR thru IN5196UR, CDLL5194 thru CDLL5196 1000 100 10 1 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1000 100 10 1 0.1 .01 NOTE : All temperatures shown on graphs are junction temperatures .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage 138 -65C 25C 150C 100C 150C 25C 100C -65C I - Forward Current - (mA) F I - Reserve Current - (A) R