DSC1101/21
Low-Jitter Precision CMOS Oscillator
Features General Description
Low RMS Phase Jitter: <1 ps (typ.) The DSC1101 and DSC1121 series of high
performance oscillators utilize a proven silicon MEMS
High Stability: 10 ppm, 20 ppm, 25 ppm,
technology to provide excellent jitter and stability over
50 ppm
a wide range of supply voltages and temperatures. By
Wide Temperature Range:
eliminating the need for quartz or SAW technology,
- Automotive: 55C to +125C
MEMS oscillators significantly enhance reliability and
- Ext. Industrial: 40C to +105C
accelerate product development, while meeting
- Industrial: 40C to +85C
stringent clock performance criteria for a variety of
communications, storage, and networking applications.
- Commercial: 20C to +70C
High Supply Noise Rejection: 50 dBc
DSC1101 has a standby feature that allows it to
completely power-down when EN pin is pulled low;
Wide Freq. Range: 2.3 MHz to 170 MHz
whereas for DSC1121, only the outputs are disabled
Small Industry Standard Footprints
when EN is low. Both oscillators are available in
- 2.5 mm x 2.0 mm, 3.2 mm x 2.5 mm, 5.0 mm
industry standard packages, including the small
x 3.2 mm, and 7.0 mm x 5.0 mm
2.5 mm x 2.0 mm, and are drop-in replacements for
Excellent Shock and Vibration Immunity
standard 4-pin CMOS quartz crystal oscillators.
- Qualified to MIL-STD-883
High Reliability
- 20x Better MTF than Quartz Oscillators
Functional Block Diagram
Low Current Consumption
Supply Range of 2.25 to 3.6V
Standby and Output Enable Function
Lead-Free and RoHS Compliant
Applications
Storage Area Networks
- SATA, SAS, Fibre Channel
Passive Optical Networks
- EPON, 10G-EPON,V GPON, 10G-PON
Ethernet
- 1G, 10GBASE-T/KR/LR/SR, and FCoE
HD/SD/SDI Video and Surveillance
PCI Express
Display Port
2017 Microchip Technology Inc. DS20005613B-page 1DSC1101/21
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Input Voltage, V ..............................................................................................................................0.3V to V + 0.3V
IN DD
Supply Voltage .......................................................................................................................................... 0.3V to +4.0V
ESD Protection On All Pins ...........................................................................................4000V HBM, 1500V CDM (max.)
Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Note: 1000+ years of data retention on internal memory.
TABLE 1-1: DC CHARACTERISTICS
Electrical Characteristics
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Voltage (Note 1)V 2.25 3.6 V
DD
DSC1101, EN pin low, output
0.095
is disabled
DSC1121, EN pin low, output
Supply Current I 20 22 mA
DD
is disabled
Output enabled, C = 15 pF,
L
31 35
F = 100 MHz
0
10 Ext Comm. & Ind. only
Frequency Stability
(Including frequency
20 All temp ranges
variations due to initial f ppm
25 All temp ranges
tolerance, temp. and
power supply voltage.)
50 All temp ranges
Aging f 5 ppm 1 year @ 25C
Startup Time (Note 2)t 5 ms T = 25C
SU
Input Logic Levels V 0.75V
IH DD
Input Logic High V
0.1V
V
Input Logic Low IL DD
Output Disable Time
t 5 ns
DS
(Note 3)
5 ms DSC1101
Output Enable Time t
EN
20 ns DSC1121
Enable Pull-up Resistor
40 k Pull-up Resistor Exist
(Note 4)
CMOS Output
Output Logic Levels V 0.9V
OH DD
Output Logic High VI = 6 mA
V 0.1V
OL DD
Output Logic Low
Note 1: Pin 6 V should be filtered with 0.1 F capacitor.
DD
2: t is time to 100 ppm of output frequency after V is applied and outputs are enabled.
SU DD
3: Output Waveform and Test Circuit figures define the parameters.
4: Output is enabled if pad is floated or not connected.
DS20005613B-page 2 2017 Microchip Technology Inc.