DSC1101DM2-125.0000T Microchip

DSC1101/21 Low-Jitter Precision CMOS Oscillator Features General Description Low RMS Phase Jitter: <1 ps (typ.) The DSC1101 and DSC1121 series of high performance oscillators utilize a proven silicon MEMS High Stability: 10 ppm, 20 ppm, 25 ppm, technology to provide excellent jitter and stability over 50 ppm a wide range of supply voltages and temperatures. By Wide Temperature Range: eliminating the need for quartz or SAW technology, - Automotive: 55C to +125C MEMS oscillators significantly enhance reliability and - Ext. Industrial: 40C to +105C accelerate product development, while meeting - Industrial: 40C to +85C stringent clock performance criteria for a variety of communications, storage, and networking applications. - Commercial: 20C to +70C High Supply Noise Rejection: 50 dBc DSC1101 has a standby feature that allows it to completely power-down when EN pin is pulled low Wide Freq. Range: 2.3 MHz to 170 MHz whereas for DSC1121, only the outputs are disabled Small Industry Standard Footprints when EN is low. Both oscillators are available in - 2.5 mm x 2.0 mm, 3.2 mm x 2.5 mm, 5.0 mm industry standard packages, including the small x 3.2 mm, and 7.0 mm x 5.0 mm 2.5 mm x 2.0 mm, and are drop-in replacements for Excellent Shock and Vibration Immunity standard 4-pin CMOS quartz crystal oscillators. - Qualified to MIL-STD-883 High Reliability - 20x Better MTF than Quartz Oscillators Functional Block Diagram Low Current Consumption Supply Range of 2.25 to 3.6V Standby and Output Enable Function Lead-Free and RoHS Compliant Applications Storage Area Networks - SATA, SAS, Fibre Channel Passive Optical Networks - EPON, 10G-EPON,V GPON, 10G-PON Ethernet - 1G, 10GBASE-T/KR/LR/SR, and FCoE HD/SD/SDI Video and Surveillance PCI Express Display Port 2017 Microchip Technology Inc. DS20005613B-page 1DSC1101/21 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Input Voltage, V ..............................................................................................................................0.3V to V + 0.3V IN DD Supply Voltage .......................................................................................................................................... 0.3V to +4.0V ESD Protection On All Pins ...........................................................................................4000V HBM, 1500V CDM (max.) Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note: 1000+ years of data retention on internal memory. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics Parameters Sym. Min. Typ. Max. Units Conditions Supply Voltage (Note 1)V 2.25 3.6 V DD DSC1101, EN pin low, output 0.095 is disabled DSC1121, EN pin low, output Supply Current I 20 22 mA DD is disabled Output enabled, C = 15 pF, L 31 35 F = 100 MHz 0 10 Ext Comm. & Ind. only Frequency Stability (Including frequency 20 All temp ranges variations due to initial f ppm 25 All temp ranges tolerance, temp. and power supply voltage.) 50 All temp ranges Aging f 5 ppm 1 year 25C Startup Time (Note 2)t 5 ms T = 25C SU Input Logic Levels V 0.75V IH DD Input Logic High V 0.1V V Input Logic Low IL DD Output Disable Time t 5 ns DS (Note 3) 5 ms DSC1101 Output Enable Time t EN 20 ns DSC1121 Enable Pull-up Resistor 40 k Pull-up Resistor Exist (Note 4) CMOS Output Output Logic Levels V 0.9V OH DD Output Logic High VI = 6 mA V 0.1V OL DD Output Logic Low Note 1: Pin 6 V should be filtered with 0.1 F capacitor. DD 2: t is time to 100 ppm of output frequency after V is applied and outputs are enabled. SU DD 3: Output Waveform and Test Circuit figures define the parameters. 4: Output is enabled if pad is floated or not connected. DS20005613B-page 2 2017 Microchip Technology Inc.