DSC1105/25 Low EMI, Low-Jitter Precision CMOS Oscillator Features General Description Low Drive Strength for EMI Reduction The DSC1105 and DSC1125 series of high performance oscillators utilize a proven silicon MEMS Low RMS Phase Jitter: <1 ps (typ.) technology to provide excellent jitter and stability over High Stability: 10 ppm, 20 ppm, 25 ppm, a wide range of supply voltages and temperatures. By 50 ppm eliminating the need for quartz or SAW technology, Wide Temperature Range: MEMS oscillators significantly enhance reliability and - Automotive: 55C to +125C accelerate product development, while meeting - Ext. Industrial: 40C to +105C stringent clock performance criteria for a variety of communications, storage, and networking applications. - Industrial: 40C to +85C - Commercial: 20C to +70C DSC1105 has a standby feature that allows it to High Supply Noise Rejection: 50 dBc completely power-down when EN pin is pulled low whereas for DSC1125, only the outputs are disabled Wide Freq. Range: 2.3 MHz to 100 MHz when EN is low. Both oscillators are available in Small Industry Standard Footprints industry standard packages, including the small - 2.5 mm x 2.0 mm, 3.2 mm x 2.5 mm, 5.0 mm 2.5 mm x 2.0 mm, and are drop-in replacements for x 3.2 mm, and 7.0 mm x 5.0 mm standard 4-pin CMOS quartz crystal oscillators. The Excellent Shock and Vibration Immunity DSC1105/25 is functionally equivalent to the - Qualified to MIL-STD-883 DSC1101/21, but it has lower drive strength for EMI reduction. High Reliability - 20x Better MTF than Quartz Oscillators Low Current Consumption Functional Block Diagram Supply Range of 2.25 to 3.6V Standby and Output Enable Function Lead-Free and RoHS Compliant Applications Storage Area Networks - SATA, SAS, Fibre Channel Passive Optical Networks - EPON, 10G-EPON,V GPON, 10G-PON Ethernet - 1G, 10GBASE-T/KR/LR/SR, and FCoE HD/SD/SDI Video and Surveillance PCI Express Display Port 2017 Microchip Technology Inc. DS20005869A-page 1DSC1105/25 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Input Voltage, V ..............................................................................................................................0.3V to V + 0.3V IN DD Supply Voltage .......................................................................................................................................... 0.3V to +4.0V ESD Protection On All Pins ...........................................................................................4000V HBM, 1500V CDM (max.) Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note: 1000+ years of data retention on internal memory. TABLE 1-1: DC CHARACTERISTICS Parameters Sym. Min. Typ. Max. Units Conditions Supply Voltage (Note 1)V 2.25 3.6 V DD DSC1105, EN pin low, output 0.095 is disabled DSC1125, EN pin low, output Supply Current I 20 22 mA DD is disabled Output is enabled 31 35 C = 15 pF, F = 100 MHz L 0 10 Ext Comm. & Ind. only Frequency Stability (Including frequency 20 All temp ranges variations due to initial f ppm 25 All temp ranges tolerance, temp. and power supply voltage.) 50 All temp ranges Aging f 5 ppm 1 year 25C Startup Time (Note 2)t 5 ms T = 25C SU V 0.75V Input Logic High IH DD Input Logic Levels V V 0.25 V Input Logic Low IL DD Output Disable Time t 5 ns DS (Note 3) 5 ms DSC1105 Output Enable Time t EN 20 ns DSC1125 Enable Pull-up Resistor 40 k Pull-up Resistor Exist (Note 4) CMOS Output Output Logic High V 0.9V OH DD I = 1.6 mA Output Logic Levels V Output Logic Low V 0.1V OL DD I = 1.6 mA Rise Time t 4 5 R 20% to 80%, C = 15 pF L Output Transition Time ns Fall Time t 4.7 6 F 20% to 80%, C = 15 pF L DS20005869A-page 2 2017 Microchip Technology Inc.