X-On Electronics has gained recognition as a prominent supplier of GBJ35M Bridge Rectifiers across the USA, India, Europe, Australia, and various other global locations. GBJ35M Bridge Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Bridge Rectifiers, ensuring timely deliveries around the world.

GBJ35M Microchip

GBJ35M electronic component of Microchip
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See Product Specifications
Part No.GBJ35M
Manufacturer: Microchip
Category: Bridge Rectifiers
Description: Diode Rectifier Bridge Single 1KV 35A
Datasheet: GBJ35M Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 61.5493 ea
Line Total: USD 123.1 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2
Multiples : 1
2 : USD 61.5493

   
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RoHS - XON
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We are delighted to provide the GBJ35M from our Bridge Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GBJ35M and other electronic components in the Bridge Rectifiers category and beyond.

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GBJ35D thru GBJ35M Glass Passivated Single Phase Bridge Rectifiers Reverse Voltage 200 to 1000V Forward Current 35.Amp Features y Glass passivated die construction y Ideal for printed circuit boards y Plastic material used carries UL flammability recognition 94V-0 y High surge current capability y High temperature soldering guaranteed: 265 /10 seconds, 0.375 (9.5mm) lead Circuit length, 5lbs. (2.3kg) tension Mechanical Data Case: Molded plastic case Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Marked on Body - Mounting Position: Any Module Type TYPE VRRM VRSM GBJ35D 200V 300V GBJ35G 400V 500V GBJ35J 600V 700V GBJ35K 800V 900V GBJ35M 1000V 1100V Maximum Ratings and Thermal Characteristics (TA = 25 unless otherwise noted) Symbol Conditions Values Units 35 A IF(AV) Maximum average forward output rectified current Tc =55 Peak forward surge current single half sine-wave superimposed 400 A IFSM on rated load (JEDEC Method) 2 2 660 i t Rating for fusing (t<8.3ms) A s Visol a.c.50HZ r.m.s. 1min 2500 V RJC Maximum thermal resistance per leg (1) 1.0 /W TOR Mounting Torque (Recommended torque:0.5 N.m) 0.8 N.m Tj, TSTG Operating Junction and storage temperature range -55 to +150 Weight Approximate Weight 7.0 g Electrical Characteristics (TA = 25 unless otherwise noted) Symbol Conditions Values Units VF Maximum Instantaneous Forward Voltage per leg IFM =17.5A 1.1 V Maximum DC reverse current at rated TA = 25 5.0 IR A 500 DC blocking voltage per leg TA = 125 Notes: (1) Junction to case with heatsink (2) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with 6 screw Document Number: GBJ35D thru GBJ35M www.smsemi.com Jan.12, 2011 1 + GBJ35D thru GBJ35M Performance Curves 50 100 Mounted on a 220x220x50 mm AL plate heatsink 40 10 30 1.0 20 0.1 10 Resistive or Tj=25C Inductive load Pulse Width=300 s 0 0.01 0 50 100 150 0.5 0.7 0.9 1.1 1.3 1.5 T , TEMPERATURE (C) V , INSTANTANEOUSFWDVOLTAGE (V) A F Fig.1 Forward Current Derating Curve Fig.2 Typical Forward Characteristics, per element 500 1000 Single half-sine-wave (JEDEC method) 400 Tj=25C 300 100 200 100 Tj=25C f =1MHZ 0 10 1 10 100 1 10 100 NUMBER OF CYCLES AT 60Hz V , REVERSE VOLTAGE (V) R Fig.3 Max Non-Repetitive Surge Current Fig.4 Typical Junction Capacitance per Element 100 Tj=125C 10 1.0 0.1 Tj=25C 0.01 0 20 40 60 80 100 120 140 RATED PERCENT OF PEAK REVERSE VOLTAGE (%) Fig.5 Typical Reverse Characteristics Document Number: GBJ35D thru GBJ35M www.smsemi.com Jan.12, 2011 2 I , PEAK FWD SURGE CURRENT (A) FSM I , AVERAGE FORWARD CURRENT (A) O I , INSTANTANEOUS REVERSE CURRENT (A) R I , INSTANTANEOUS FORWARD CURRENT (A) F C CAPACITANCE (pF) j,

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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