JAN1N5616 Microchip

WWW.Microsemi .COM 1N5614 1N5622 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS DESCRIPTION APPEARANCE This standard recovery rectifier diode series is military qualified to MIL-PRF- 19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and A Package ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N5614 1N5622 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave I O input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse t rr current occurs. GRAPHS FIGURE 1 FIGURE 2 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT TYPICAL REVERSE CURRENT vs PIV Copyright 2007 Microsemi Page 2 1-15-2007 REV C Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503