X-On Electronics has gained recognition as a prominent supplier of JAN1N5811CBUS Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. JAN1N5811CBUS Schottky Diodes & Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

JAN1N5811CBUS Microchip

JAN1N5811CBUS electronic component of Microchip
JAN1N5811CBUS Microchip
JAN1N5811CBUS Schottky Diodes & Rectifiers
JAN1N5811CBUS  Semiconductors

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See Product Specifications
Part No. JAN1N5811CBUS
Manufacturer: Microchip
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 150V 6A 2-Pin E-MELF
Datasheet: JAN1N5811CBUS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7: USD 21.2516 ea
Line Total: USD 148.76 
Availability - 0
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 06 Jan to Fri. 10 Jan
MOQ : 7
Multiples : 1
7 : USD 21.2516
10 : USD 20.9826

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN1N5811CBUS from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN1N5811CBUS and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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WWW.Microsemi .COM 1N5807CBUS1N5811CBUS 1N5807CBUS thru 1N5811CBUS SURFACE MOUNT VOIDLESS- HERMETICALLY-SEALED ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery surface mount rectifier diode series is military qualified to MIL- PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal Category III metallurgical bond. These devices are also available in axial- leaded package configurations (see separate data sheet for 1N5807CB thru 1N5811CB). Microsemi also offers numerous other rectifier products to meet higher and lower current Package E ratings with various recovery time speed requirements including standard, fast, and or D-5B ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N5807CBUS1N5811CBUS 1N5807CBUS thru 1N5811CBUS SURFACE MOUNT VOIDLESS- HERMETICALLY-SEALED ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak t rr reverse current is reached. GRAPHS FIGURE 1 FIGURE 2 TYPICAL FORWARD CURRENT TYPICAL REVERSE CURRENT vs. VOLTAGE vs. FORWARD VOLTAGE FIGURE 3 FORWARD PULSE CURRENT vs. DURATION Copyright 2007 Microsemi Page 2 7-26-2007 Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
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MICROCHIP TECH.
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Microsemi Analog Mixed Signal Group
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SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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