X-On Electronics has gained recognition as a prominent supplier of JAN1N6155AUS/TR ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. JAN1N6155AUS/TR ESD Suppressors / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

JAN1N6155AUS/TR Microchip

JAN1N6155AUS/TR electronic component of Microchip
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Part No.JAN1N6155AUS/TR
Manufacturer: Microchip
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes Bi-Directional TVS
Datasheet: JAN1N6155AUS/TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.89 ea
Line Total: USD 19.89 
Availability - 33
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 19.89

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the JAN1N6155AUS/TR from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN1N6155AUS/TR and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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1N6138A 1N6173A Qualified Levels: Voidless Hermetically Sealed Bidirectional JAN, JANTX, JANTXV Available on Transient Voltage Suppressors and JANS commercial Qualified to MIL-PRF-19500/516 versions DESCRIPTION This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak standoff voltage selection from 5.2 to 152 Volts with a 1500 W rating for a 10/1000 s pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability. These devices are available as both a non-suffix part and an A version part involving different voltage tolerances as described in the nomenclature section. These devices are also available in a surface mount MELF package configuration. Important: For the latest information, visit our website 1N6138A 1N6173A MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only. MARKING: Body paint and part number POLARITY: No polarity marking for these bidirectional TVSs TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 1270 milligrams See package dimensions on last page. PART NOMENCLATURE JAN 1N6138 A e3 Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = commercial Voltage Tolerance A = Standard JEDEC type number Blank =5% higher V , 5% lower C See Electrical Characteristics min. V and 5% lower I (BR) PP table SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. I Standby Current: The current through the device at rated stand-off voltage. D Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The P PP impulse power is the maximum-rated value of the product of I and V . PP C T4-LDS-0278, Rev. 2 (11/19/13) 2013 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
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MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
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MICROCHIP (MICROSEMI)
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Microchip / Microsemi
Microchip / Vectron
Microchip Tech
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MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
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Microsemi Corporation
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Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
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ROVING NETWORKS INC
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ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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