X-On Electronics has gained recognition as a prominent supplier of JAN1N914 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. JAN1N914 Small Signal Switching Diodes are a product manufactured by Microchip. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

JAN1N914 Microchip

JAN1N914 electronic component of Microchip
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Part No.JAN1N914
Manufacturer: Microchip
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 75 V Signal or Computer Diode
Datasheet: JAN1N914 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 0.94 ea
Line Total: USD 23.5 
Availability - 4365
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
4365
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 1
25 : USD 0.94
250 : USD 0.7712
500 : USD 0.7575
1000 : USD 0.7462
2500 : USD 0.735
5000 : USD 0.7237
7500 : USD 0.7125
10000 : USD 0.7025

405
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 11
Multiples : 1
11 : USD 0.8242
500 : USD 0.7679
5000 : USD 0.7454

4365
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 75
Multiples : 25
75 : USD 1.1501
250 : USD 0.9437
500 : USD 0.9268
1000 : USD 0.9131
2500 : USD 0.8993

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN1N914 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN1N914 and other electronic components in the Small Signal Switching Diodes category and beyond.

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1N914 Qualified Levels: Glass Axial Switching Diode JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/116 version DESCRIPTION This 1N914 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-35 package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. Important: For the latest information, visit our website 1N914 MECHANICAL and PACKAGING CASE: Hermetically sealed glass package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (commercial grade only) over copper clad steel. Solderable per MIL- STD-750, method 2026. POLARITY: Cathode indicated by band. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N914 (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial grade JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. t Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum F value). V Reverse Voltage: The reverse voltage dc value, no alternating component. R Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted FORWARD FORWARD REVERSE FORWARD REVERSE REVERSE REVERSE REVERSE CAPACI- CAPACI- VOLTAGE VOLTAGE RECOVERY RECOVERY CURRENT CURRENT CURRENT CURRENT TANCE TANCE V V TIME TIME I 20 V I 75 V I I C C F1 F2 R1 R2 R3 R4 I =10 mA I =50 mA t t 20 V 75 V (Note 3) (Note 4) F F rr fr o o (Note 1) (Note 2) T =150 C T =150 C A A V V ns ns nA A A A pF pF 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 NOTE 1: I = I = 10 mA, R = 100 Ohms. NOTE 3: V = 0 V, f = 1 MHz, V = 50 mV (pk to pk). F R L R SIG NOTE 2: I = 50 mA. NOTE 4: V = 1.5V, f = 1 MHz, V = 50 mV (pk to pk). F R SIG T4-LDS-0279, Rev. 1 (121565) 2012 Microsemi Corporation Page 2 of 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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