X-On Electronics has gained recognition as a prominent supplier of Jan2N6350 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. Jan2N6350 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Jan2N6350 Microchip

Jan2N6350 electronic component of Microchip
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Part No.Jan2N6350
Manufacturer: Microchip
Category: Darlington Transistors
Description: Transistor Darlington NPN 80V 5A 4-Pin TO-33
Datasheet: Jan2N6350 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 265.0207 ea
Line Total: USD 265.02 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 167.6766
10 : USD 157.6457
30 : USD 150.3496
50 : USD 146.1805
100 : USD 143.0537
250 : USD 138.8845
500 : USD 135.7576

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 265.0207
25 : USD 159.0189
100 : USD 127.2151

   
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We are delighted to provide the Jan2N6350 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Jan2N6350 and other electronic components in the Darlington Transistors category and beyond.

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2N6350 and 2N6351 Qualified Levels: JAN, JANTX, and NPN Darlington Power Silicon Transistor Available on JANTXV commercial Qualified per MIL-PRF-19500/472 versions DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33 leaded top-hat has three isolated terminals with terminal four, the collector terminal, tied to the case. Important: For the latest information, visit our website 2N6350 and 2N6351 MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Solder dip (Sn63/Pb37), RoHS compliant matte-tin plating available on commercial grade only. MARKING: Part number, date code, manufacturers ID and serial number WEIGHT: Approximately 1.2 grams See package dimensions on last page. PART NOMENCLATURE JAN 2N6350 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Base current: The value of the dc current into the base terminal. I B Collector current: The value of the dc current into the collector terminal. I C I Emitter current: The value of the dc current into the emitter terminal. E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. V CC Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base V CEO terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. V CE Emitter-base voltage: The dc voltage between the emitter and the base. V EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal V EBO open-circuited. T4-LDS-0314, Rev. 1 (11/20/13) 2013 Microsemi Corporation Page 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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