1N5807, 1N5809 and 1N5811
Qualified Levels:
VOID-LESS HERMETICALLY SEALED ULTRAFAST
JAN, JANTX,
Available on
RECOVERY GLASS RECTIFIERS
JANTXV and JANS
commercial
versions
Qualified per MIL-PRF-19500/477
DESCRIPTION
This Ultrafast Recovery rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass
construction using an internal Category 1 metallurgical bond. These devices are available in both
leaded and surface mount MELF package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
Important: For the latest information, visit our website 1N5807, 1N5809 and 1N5811
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
MARKING: Body coated in blue with part number.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 750 milligrams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5807 (e3)
Reliability Level RoHS Compliance
JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol Definition
V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
BR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
V
RWM
range.
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
I
O
a 180 degree conduction angle.
V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
F
I Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
R
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
t
rr
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERISTICS @ T = 25 C unless otherwise stated
A
REVERSE SURGE REVERSE
BREAKDOWN MAXIMUM FORWARD
VOLTAGE CURRENT CURRENT RECOVERY
VOLTAGE
(MIN.) (MAX.) (MAX) TIME (MAX)
@ 4 A (8.3 ms pulse)
@ 100 A V @ V I t
FM RWM FSM rr
V I (Note 1) (Note 2)
(BR) R
TYPE
Volts A
o o o o
Volts 25 C 125 C 25 C 125 C Amps ns
1N5807 60 0.875 0.800 5 525 125 30
1N5809 110 0.875 0.800 5 525 125 30
1N5811 160 0.875 0.800 5 525 125 30
o
NOTES: 1. T = 25 C @ I = 3.0 A and V for ten 8.3 ms surges at 1 minute intervals.
A O RWM
2. I = 1.0 A, I = 1.0 A, I = 0.10 A and di/dt = 100 A/ s min.
F RM R(REC)
T4-LDS-0168, Rev. 3 (120776) 2012 Microsemi Corporation Page 2 of 5