JANTX1N6075 Microchip

1N6073 thru 1N6081 WWW.Microsemi .COM 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION POWER RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF- 19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (T =70C) in L different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6073 thru 1N6081 WWW.Microsemi .COM 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION POWER RECTIFIERS o ELECTRICAL CHARACTERISTICS 25 C unless otherwise specified WORKING MAXIMUM MAXIMUM AVERAGE AVERAGE PULSED MAXIMUM MAXIMUM PEAK FORWARD REVERSE RECTIFIED RECTIFIED TEST REVERSE SURGE REVERSE VOLTAGE RECOVERY TYPE CURRENT CURRENT CURRENT CURRENT I CURRENT I O O VOLTAGE (PULSED) TIME* I V I T = 70C T = 55C R RWM FSM L A V V I t RWM rr F F VOLTS VOLTS AMPS AMPS AMPS A ns AMPS 1N6073 50 2.04 9.4 3.0 0.85 1.0 30 35 1N6074 100 2.04 9.4 3.0 0.85 1.0 30 35 1N6075 150 2.04 9.4 3.0 0.85 1.0 30 35 1N6076 50 1.76 18.8 6.0 1.3 5.0 30 75 1N6077 100 1.76 18.8 6.0 1.3 5.0 30 75 1N6078 150 1.76 18.8 6.0 1.3 5.0 30 75 1N6079 50 1.50 37.7 12.0 2.0 10.0 30 175 1N6080 100 1.50 37.7 12.0 2.0 10.0 30 175 1N6081 150 1.50 37.7 12.0 2.0 10.0 30 175 *NOTE: I = 0.5 A, I = 1.0 A, and I = 0.25 A F RM R(REC) SYMBOLS & DEFINITIONS Symbol Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. V BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak t rr reverse current is reached. GRAPHS FIGURE 1 FIGURE 2 FIGURE 3 Maximum power in watts vs lead temperature Maximum power in watts vs lead temperature Maximum power in watts vs lead temperature For 1N6079, 1N6080 and 1N6081 for 1N6076, 1N6077 and 1N6078 for 1N6073, 1N6074 and 1N6075 o Maximum lead temperature in C (T ) at point L from body (for maximum operating junction temperature with equal two-lead conditions). L Copyright 2007 Microsemi Page 2 10-03-2007 REV B Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 MAXIMUM POWER DISSIPATION IN WATTS MAXIMUM POWER DISSIPATION IN WATTS MAXIMUM POWER DISSIPATION IN WATTS