X-On Electronics has gained recognition as a prominent supplier of LX5510LQ RF Amplifier across the USA, India, Europe, Australia, and various other global locations. LX5510LQ RF Amplifier are a product manufactured by Microchip. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

LX5510LQ Microchip

LX5510LQ electronic component of Microchip
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See Product Specifications
Part No.LX5510LQ
Manufacturer: Microchip
Category: RF Amplifier
Description: RF Amplifier LX5510LQ
Datasheet: LX5510LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.9035
10 : USD 1.495
100 : USD 1.1875
500 : USD 1.026
1000 : USD 0.8736
2500 : USD 0.8424
5000 : USD 0.8424
10000 : USD 0.8412
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the LX5510LQ from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LX5510LQ and other electronic components in the RF Amplifier category and beyond.

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WWW.Microsemi .COM LX5510 LX5510 LX5510 InGaP HBT 2.4 2.5 GHz Power Amplifier TM PRODUCTION DATA SHEET DESCRIPTION KEY FEATURES Advanced InGaP HBT The LX5510 is a power amplifier For +19dBm OFDM output power 2.4 2.5GHz Operation optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a Single-Polarity 3.3V Supply the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of Low Quiescent Current Icq PA is implemented as a two-stage 3.0%, and consumes 125 mA total DC ~65mA monolithic microwave integrated current with the nominal 3.3V bias. Power Gain ~20dB 2.45GHz circuit (MMIC) with active bias and With increased bias of 5 V EVM is ~ and Pout = 19dBm input/output pre-matching. 4% at 23 dBm. Total Current 125mA for Pout = The device is manufactured with an The LX5510 is available in a 16-pin 19dBm 2.45GHz OFDM InGaP/GaAs Heterojunction Bipolar 3mmx3mm micro-lead quad package EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Transistor (HBT) IC process (MLPQ). The compact footprint, low 2 Small Footprint (3 x 3 mm ) (MOCVD). With single low voltage profile, and excellent thermal capability Low Profile (0.9mm) supply of 3.3V 20 dB power gain of the MLPQ package makes the between 2.4-2.5GHz, at a low LX5510 an ideal solution for medium- quiescent current of 65mA. gain power amplifier requirements for APPLICATIONS IEEE 802.11b/g applications IEEE 802.11b/g IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM PACKAGE DATA PACKAGE DATA VCC N/C N/C VB1 VC1 VB2 N/C N/C LX5510 InGaP HBT 2.4 2.5 GHz Power Amplifier TM PRODUCTION DATA SHEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W 13 14 15 16 RF Input Power...........................................................................................15dBm 12 VC2 1 N/C * Operation Ambient Temperature ...................................................-40C to +85C 2 11 RF IN RF OUT 1 Storage Temperature....................................................................-65C to +150C 3 RF OUT RF IN 0 Peak Package Solder Reflow Temp. (40 seconds maximum exposure)........ 260C (+0, -5) 9 4 N/C N/C 8 7 6 5 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 * Pad is Ground LQ PACKAGE THERMAL DATA (Bottom View) N/C = No connect Plastic MLPQ 16-Pin LQ RoHS / Pb-free 100% Matte Tin Lead Finish THERMAL RESISTANCE-JUNCTION TO CASE, 10C/W JC THERMAL RESISTANCE-JUNCTION TO AMBIENT, 50C/W JA FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control VB2 voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, VCC resulting in a single supply voltage (referred to as Vc). RF OUT RF output. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor, VC1 followed by a 8.2 nH blocking inductor at the supply side. Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor VC2 and 1 uF bypass capacitor. The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power GND amplifier. Copyright 2000 Microsemi Page 2 Rev. 1.0d 2005-08-18 Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ATM
Atmel
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M4S
M6S
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M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
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MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
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MSC
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ROVING NETWORKS INC.
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Silicon Storage
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