LX5535LQ-TR Microchip

WWW.Microsemi .COM LX5535 LX5535 LX5535 InGaP HBT 2.4 2.5 GHz Power Amplifier PRODUCTION DATA SHEET D E S C R IP T I ON K E Y FE A T UR ES The LX5535 is a power amplifier The output power for EVM(Error Advanced InGaP HBT 2.4-2.5GHz Operation optimized for WLAN applications in Vector Magnitude) of 3.5% is 25dBm Single-Polarity 3-5V Supply the 2.4-2.5 GHz frequency range. The (64QAM/54Mbps), where the PA Quiescent Current 120mA PA is implemented as a three-stage consumes 260mA total DC current. Power Gain 32 dB monolithic microwave integrated The LX5535 is available in a 16-pin Power for EVM~3.5 % circuit (MMIC) with active bias and 3mm x 3mm micro-lead package 54Mbps/64QAM : 25dBm output pre-matching. (MLPQ-16L). The compact footprint, Total Current 260mA for The device is manufactured with an low profile, and thermal capability of Pout=25dBm, 802.11g InGaP/GaAs Heterojunction Bipolar the MLP package makes the LX5535 an 802.11b mask-compliant power : 28dBm Transistor (HBT) IC process ideal solution for high-gain power Total Current 370mA for (MOCVD). With single low voltage amplifier requirements for IEEE Pout=+28dBm, 802.11b supply of 5V, it provides 32 dB power 802.11b/g and WiMAX applications. 2 Small Footprint: 3x3mm gain between 2.4-2.5GHz, at a low Low Profile: 0.9mm quiescent current of 120mA. IMPORTANT: For the most current data, consult MICROSEMIs website: NOTES NOTES WWW.Microsemi .COM LX5535 InGaP HBT 2.4 2.5 GHz Power Amplifier PRODUCTION DATA SHEET NOT E S Thank you for your interest in Microsemi Analog Mixed Signal products. The full data sheet for this device contains proprietary information. To obtain a copy, please contact your local Microsemi sales representative. The name of your local representative can be obtained at the following link