MCP14E9-E/P Microchip

MCP14E9/10/11 3.0A Dual High-Speed Power MOSFET Driver With Enable Features General Description High Peak Output Current: 3.0A (typical) The MCP14E9/10/11 devices are high-speed MOSFET drivers, capable of providing 3.0A of peak current. The Independent Enable Function for Each Driver dual inverting, dual non-inverting and complementary Output outputs are directly controlled from either TTL or Wide Input Supply Voltage Operating Range: CMOS (3V to 18V). These devices also feature low - 4.5V to 18V shoot-through current, near matched rise/fall times and Low Shoot-Through/Cross-Conduction Current in propagation delays, which make them ideal for high Output Stage switching frequency applications. High Capacitive Load Drive Capability: The MCP14E9/10/11 devices operate from a 4.5V to -t : 14 ns with 1800 pF load (typical) R 18V single power supply and can easily charge and -t : 17 ns with 1800 pF load (typical) discharge 1800 pF of MOSFET gate capacitance. They F Short Delay Times: provide low enough impedances, in both the ON and OFF states, to ensure the MOSFETs intended state -t : 45 ns (typical) D1 will not be affected, even by large transients. -t : 45 ns (typical) D2 The additional control of the MCP14E9/10/11 outputs is Low Supply Current: allowed by the use of separate enable functions. The - With Logic 1 Input/Enable 1 mA (typical) ENB A and ENB B pins are active-high and are - With Logic 0 Input/Enable 300 A (typical) . The pins may be left floating internally pulled up to V DD Latch-up Protected: Passed JEDEC JESD78A for standard operation. Logic Input will Withstand Negative Swing, The MCP14E9/10/11 dual output 3.0A driver family is up to 5V offered in both surface-mount and pin-through-hole o o Space-Saving Packages: C to +125 C temperature rating. packages with a -40 - 8-Lead SOIC, PDIP, 6x5 DFN The low thermal resistance of the thermally enhanced DFN package allows greater power dissipation capability for driving heavier capacitive or resistive Applications loads. Switch Mode Power Supplies These devices are highly latch-up resistant under any Pulse Transformer Drive conditions within their power and voltage ratings. They Line Drivers are not subject to damage when up to 5V of noise Motor and Solenoid Drive spiking (of either polarity) occurs on the ground pin. The devices are fully latch-up protected when tested according to JEDEC JESD78A. All terminals are fully protected against Electrostatic Discharge (ESD), up to 4 kV (HBM) or 400V (MM). 2011 Microchip Technology Inc. DS25005A-page 1MCP14E9/10/11 Package Types MCP14E10 MCP14E10 MCP14E9 MCP14E9 MCP14E11 MCP14E11 PDIP, SOIC 6x5 DFN* 1 8 ENB A ENB B ENB B ENB B ENB B ENB B ENB B ENB A 1 8 OUT A OUT A OUT A 2 7 IN A IN A 2 7 OUT A OUT A OUT A EP 9 GND V V V V V V 3 6 3 6 DD DD DD DD DD DD GND IN B 4 5 OUT B OUT B OUT B OUT B IN B45 OUT B OUT B * Includes Exposed Thermal Pad (EP) see Table 3-1. (1) Functional Block Diagram V DD Inverting V DD Output Internal Pull-up Non-Inverting Enable 4.7V Input MCP14E9 Dual Inverting Effective 4.7V Input C = 20 pF MCP14E10 Dual Non-Inverting (Each Input) MCP14E11 One Inverting, One Non-Inverting GND Note 1: Unused inputs should be grounded. DS25005A-page 2 2011 Microchip Technology Inc.