MCP6G02T-E/SN Microchip

Resistor Ladder (R ) LAD MCP6G01/1R/1U/2/3/4 110 A Selectable Gain Amplifier Features Description 3 Gain Selections: The Microchip Technology Inc. MCP6G01/1R/1U/2/3/4 - +1, +10, +50 V/V are analog Selectable Gain Amplifiers (SGA). They can One Gain Select Input per Amplifier be configured for gains of +1V/V, +10V/V, and +50 V/V through the Gain Select input pin(s). The Chip Rail-to-Rail Input and Output Select pin on the MCP6G03 can put it into shutdown to Low Gain Error: 1% (max.) conserve power. These SGAs are optimized for single High Bandwidth: 250 kHz to 900 kHz (typ.) supply applications requiring reasonable quiescent Low Supply Current: 110 A (typ.) current and speed. Single Supply: 1.8V to 5.5V The single amplifiers MCP6G01, MCP6G01R, Extended Temperature Range: -40C to +125C MCP6G01U, and MCP6G03, are available in 5-pin SOT-23 package and the dual amplifier MCP6G02, are Typical Applications available in 8-pin SOIC and MSOP packages. The quad amplifier MCP6G04 is available in 14-pin SOIC A/D Converter Driver and TSSOP packages. All parts are fully specified from Industrial Instrumentation -40C to +125C. Bar Code Readers Metering Package Types Digital Cameras MCP6G01 MCP6G03 SOIC, MSOP SOIC, MSOP Block Diagram NC NC 1 NC 1 CS 8 8 V GSEL 2 V GSEL 2 V DD 7 7 DD DD V V 3 6 V 3 6 V IN IN OUT OUT V V V 4 5 4 5 IN SS NC SS NC V OUT Gain MCP6G01 MCP6G02 R F Switches SOT-23-5 SOIC, MSOP 3 V 1 OUTA 8 V V 1 5 V DD OUT DD GSELA 2 V R 7 Gain Select OUTB G V 2 SS GSEL Logic V 3 INA 6 GSELB V 3 4 GSEL IN V 5M 4 SS 5 V INB CS MCP6G01R MCP6G04 (MCP6G03 SOT-23-5 SOIC, TSSOP only) V 1 5 V OUT SS V 1 14 V OUTA OUTD V SS V 2 DD GSELA 2 13 GSELD V 3 4 GSEL IN V 3 12 V INA IND Gain GSEL Voltage (Typ.) V 4 11 V DD SS (V/V) (V) MCP6G01U SOT-23-5 V 5 10 V INB INC 1V /2 (or open) DD V 1 5 V GSELB 6 9 GSELC IN DD 10 0 2 V 7 8 V V OUTB OUTC SS 50 V DD GSEL 3 4 V OUT Note: V is assumed to be 0V SS 2006 Microchip Technology Inc. DS22004B-page 1MCP6G01/1R/1U/2/3/4 Notice: Stresses above those listed under Absolute 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to the CHARACTERISTICS device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not Absolute Maximum Ratings implied. Exposure to maximum rating conditions for extended V V ........................................................................7.0V periods may affect device reliability. DD SS Current at Analog Input Pin (V ) ......................................2mA IN See Section 4.1.4 Input Voltage and Current Limits. Analog Input (V ) ..................... V 1.0VtoV +1.0V IN SS DD All other Inputs and Outputs........... V 0.3VtoV +0.3V SS DD Output Short Circuit Current...................................continuous Current at Output and Supply Pins ................................ 30 mA Storage Temperature.....................................-65C to +150C Junction Temperature..................................................+150C ESD protection on all pins (HBM MM) ................ 4 kV 200V DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, T = +25C, V = +1.8V to +5.5V, V = GND, G = +1 V/V, A DD SS V = (0.3V)/G, R = 100 k to V /2, GSEL = V /2, and CS is tied low. IN L DD DD Parameters Sym Min Typ Max Units Conditions Amplifier Inputs (V ) IN Input Offset Voltage V 4.5 1.0 +4.5 mV G = +1 OS 1.0 mV G = +10, +50 Input Offset Voltage Drift V /T 2 V/C G = +1, T = -40C to +125C OS A A Power Supply Rejection Ratio PSRR 65 80 dB G = +1 (Note 1) Input Bias Current I 1 pA B Input Bias Current at I 30 pA T = +85C B A Temperature I 1000 5000 pA T = +125C B A 13 Input Impedance Z 10 6 pF IN Amplifier Gain Nominal Gains G 1 to 50 V/V +1, +10 or +50 DC Gain Error G = +1 g 0.3 +0.3 % V 0.3V to V 0.3V E OUT DD G +10 g 1.0 +1.0 % V 0.3V to V 0.3V E OUT DD DC Gain Drift G = +1 G/T 1 ppm/CT = -40C to +125C A A G +10 G/T 4 ppm/CT = -40C to +125C A A Ladder Resistance (Note 1) Ladder Resistance R 200 350 500 k LAD Ladder Resistance R /T 1800 ppm/C T = -40C to +125C LAD A A across Temperature Amplifier Output DC Output Non-linearity G = +1 V 0.2 +0.2 % of FSR V = 0.3V to V 0.3V, ONL OUT DD V =1.8V DD V 0.1 +0.1 % of FSR V = 0.3V to V 0.3V, ONL OUT DD V =5.5V DD DC Output Non-linearity, G = +10, +50 V 0.05 +0.05 % of FSR V = 0.3V to V 0.3V ONL OUT DD Maximum Output Voltage Swing V , V V +10 V 10 mV G = +1 0.3V output overdrive OH OL SS DD V , V V +10 V 10 mV G +10 0.5V output overdrive OH OL SS DD Short Circuit Current I 7 mA V = 1.8V SC DD I 20 mA V = 5.5V SC DD Note 1: R (R +R in Figure 4-1) connects V , V , and the inverting input of the internal amplifier. Thus, V is coupled LAD F G SS OUT SS to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the V pin be tied directly SS to ground to avoid noise problems. 2: I includes current in R (typically 0.6 A at V = 0.3V), and excludes digital switching currents. Q LAD OUT DS22004B-page 2 2006 Microchip Technology Inc.