MCP6N16 Zero-Drift Instrumentation Amplifier Features: Description: High DC Precision: Microchip Technology Inc. offers the single Zero-Drift MCP6N16 instrumentation amplifier (INA) with Enable -V : 17 V (maximum, G = 100) OS MIN pin (EN) and three minimum gain options (G ). The MIN -TC : 60 nV/C (maximum, G = 100) 1 MIN internal offset correction gives high DC precision: it has - CMRR: 112 dB (minimum, G = 100, MIN very low offset and offset drift, and negligible 1/f noise. V =5.5V) DD Two external resistors set the gain, minimizing gain - PSRR: 110 dB (minimum, G =100, MIN error and drift over temperature. The reference voltage V =5.5V) DD (V ) shifts the output voltage (V ). REF OUT -g : 0.15% (maximum, G = 10, 100) E MIN The MCP6N16 is designed for single-supply operation, Flexible: with rail-to-rail input (no common mode crossover - Minimum Gain (G ) Options: MIN distortion) and output performance. The supply voltage 1, 10 and 100 V/V range (1.8V to 5.5V) is low enough to support many - Rail-to-Rail Input and Output portable applications. All devices are fully specified - Gain Set by Two External Resistors from -40C to +125C. Each part has EMI filters at the input pins, for good EMI rejection (EMIRR). Bandwidth: 500 kHz (typical, Gain = G =1, 10) MIN Power Supply: These parts have three minimum gain options (1, 10 -V : 1.8V to 5.5V and 100 V/V). This allows the user to optimize the input DD offset voltage and input noise for different applications. -I : 1.1 mA (typical) Q - Power Savings (Enable) Pin: EN Typical Application Circuit Enhanced EMI Protection: - Electromagnetic Interference Rejection Ratio V RTD Temperature Sensor DD (EMIRR): 111 dB at 2.4 GHz Extended Temperature Range: -40C to +125C 2.49 k 10 F Typical Applications: EN High-Side Current Sensor 4.99 k 4.99 k MCP6N16-100 Wheatstone Bridge Sensors Difference Amplifier with Level Shifting V OUT 68.1 Power Control Loops 20 k RTD 100 100 100 Design Aids: 4.99 k SPICE Macro Model Microchip Advanced Part Selector (MAPS) Package Types Application Notes MCP6N16 MCP6N16 MSOP 33 DFN * EN 1 8 V EN 1 8 V DD DD V V 2 7 V 2 7 V IM OUT EP IM OUT 9 V V 3 6 IP FG V 3 6 V IP FG V 4 5 V SS REF V 4 5 V SS REF * Includes Exposed Thermal Pad (EP) see Table 3-1. 2014 Microchip Technology Inc. DS20005318A-page 1MCP6N16 Minimum Gain Options Table 1 shows key specifications that differentiate between the different minimum gain (G ) options. MIN See Section1.0 Electrical Characteristics, Section 6.0 Packaging Information and Product Identification System for further information on G . MIN TABLE 1: KEY DIFFERENTIATING SPECIFICATIONS TC CMRR E e 1 ni ni G V PSRR V GBWP MIN OS DMH (nV/C) (dB) ( V ) (nV/ Hz) P-P Part No. (V/V) (V) (dB) (V) (MHz) Max. Min. Typ. Typ. Nom. Max. Min. Min. Typ. T = -40 to +125C V =5.5V f = 0.1 to 10 Hz f < 500 Hz A DD MCP6N16-001 1 85 1800 89 91 2.7 0.50 19 900 MCP6N16-010 10 22 180 103 104 0.27 5.0 2.2 105 MCP6N16-100 100 17 60 112 110 0.027 35 0.93 45 Note 1: G is the minimum stable gain (G ), for a given part option. In other words, G G . MIN DM DM MIN Figures 1 to 3 show input offset voltage versus 4 temperature for the three gain options (G =1, 10, MIN 33 100 V/V). 2 40 1 30 0 20 -1 10 G = 100 MIN -2 28 Samples 0 VV =55=5.5VV DD -3 V = V /2 CM DD NPBW = 3 mHz -100 -44 G = 1 MIN -20 -50 -25 0 25 50 75 100 125 28 Samples Ambient Temperature (C) V = 5.5V DD -30 V = V /2 CM DD FIGURE 3: Input Offset Voltage vs. NPBW = 3 mHz -40 Temperature, with G = 100. -50 -25 0 25 50 75 100 125 MIN Ambient Temperature (C) FIGURE 1: Input Offset Voltage vs. Temperature, with G =1. MIN 4 33 2 1 0 -1 G = 10 MIN -2 28 Samples VV = 555.5VV DD -3 V = V /2 CM DD NPBW = 3 mHz -44 -50 -25 0 25 50 75 100 125 Ambient Temperature (C) FIGURE 2: Input Offset Voltage vs. Temperature, with G =10. MIN DS20005318A-page 2 2014 Microchip Technology Inc. Input OOffset VVoltagee (V) Input OOffset Voltage (V) Input OOffset VVoltagee (V)