MCP98242T-CEMC Microchip

MCP98242 Memory Module Temperature Sensor w/EEPROM for SPD Features Description Temperature Sensor + 256 Byte Serial EEPROM Microchip Technology Inc.s MCP98242 digital temperature sensor converts temperature from -40C EEPROM for Serial Presence Detect (SPD) and +125C to a digital word. This sensor meets Optimized for Voltage Range: 3.0V to 3.6V JEDEC Specification JC42.4 Mobile Platform Memory Shutdown/Standby Current: 3 A (max.) Module Thermal Sensor Component. It provides an 2 2-wire Interface: I C/SMBus-Compatible accuracy of 0.5C/1C (typ./max.) from +75C to Available Packages: DFN-8, TDFN-8, TSSOP-8 +95C. In addition, this device has an internal 256 Byte EEPROM which can be used to store memory module and vendor information. Temperature Sensor Features The MCP98242 digital temperature sensor comes with Temperature-to-Digital Converter user-programmable registers that provide flexibility for Operating Current: 200 A (typ.) DIMM temperature-sensing applications. The registers Accuracy: allow user-selectable settings such as Shutdown or +75C to +95C - 0.5C/1C (typ./max.) Low-Power modes and the specification of temperature event and critical output boundaries. - 1C/2C (typ./max.) +40C to +125C When the temperature changes beyond the specified - 2C/3C (typ./max.) -20C to +125C boundary limits, the MCP98242 outputs an Event signal. The user has the option of setting the Event Serial EEPROM Features output signal polarity as either an active-low or active- Operating Current: high comparator output for thermostat operation, or as a temperature event interrupt output for microproces- -Write 1.1 mA (typ.) for 3.5 ms (typ.) sor-based systems. The Event output can also be con- - Read 100 A (typ.) figured as a critical temperature output. Permanent and Reversible Software Write Protect The EEPROM is designed specifically for DRAM Software Write Protection for the lower 128 bytes DIMMs (Dual In-line Memory Modules) Serial Presence Organized as 1 block of 256 bytes (256x8) Detect (SPD). The lower 128 bytes (address 00h to 7Fh) can be Permanent Write Protected (PWP) or Soft- Typical Applications ware Reversible Write Protected (SWP). This allows DRAM vendor and product information to be stored and DIMM Modules write protected. The upper 128 bytes (address 80h to Laptops, Personal Computers and Servers FFh) can be used for general purpose data storage. Hard Disk Drives and Other PC Peripherals These addresses are not write protected. 2 This sensor has an industry standard 2-wire, I C/ SMBus compatible serial interface, allowing up to eight DIMM MODULE devices to be controlled in a single serial bus. To main- 2 tain interchangeability with the I C/SMBus interface the Memory electrical specifications are specified with the operating voltage of 3.0V to 3.6V. In addition, a 40 ms (typ.) time out is implemented. MCP98242 Package Types Temperature Sensor + EEPROM MCP98242 0.5C (typ.) Sensor 8-Pin TSSOP 8-Pin DFN/TDFN (2x3) 256 Byte EEPROM for SPD V V 1 1 8 8 A0 A0 DD DD Event Event 2 7 2 A1 7 A1 SCLK SCLK 3 A2 A2 3 6 6 3.3V GND GND SDA SDA 4 4 5 DD SPD SDA SCL Event 5 2008 Microchip Technology Inc. DS21996B-page 1MCP98242 Notice: Stresses above those listed under Maximum 1.0 ELECTRICAL ratings may cause permanent damage to the device. This is CHARACTERISTICS a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Absolute Maximum Ratings Exposure to maximum rating conditions for extended periods V .................................................................................. 6.0V may affect device reliability. DD Voltage at all Input/Output pins ............... GND 0.3V to 6.0V Pin A0.................................................... GND 0.3V to 12.5V Storage temperature .....................................-65C to +150C Ambient temp. with power applied ................-40C to +125C Junction Temperature (T )...........................................+150C J ESD protection on all pins (HBM:MM) ................. (4 kV:300V) Latch-Up Current at each pin (25C)........................ 200 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, V = 3.0V to 3.6V, GND = Ground, SDA/SCL pulled-up to DD V , and T = -20C to +125C. DD A Parameters Sym Min Typ Max Unit Conditions Power Supply Operating Voltage V 3.0 3.6 V DD Operating Current Temperature Sensor I 200 500 A EEPROM Inactive DD EEPROM write I 1100 2000 A Sensor in Shutdown Mode (for t ) DD WC EEPROM read I 100 500 A Sensor in Shutdown Mode DD Shutdown Current I 1 3 A EEPROM Inactive, SHDN Sensor in Shutdown Mode Power On Reset (POR) V 2.3 V Temperature Sensor (V falling) POR DD Threshold V 1.6 V EEPROM (V falling) (see Section 5.4) POR DD Power Supply Rejection, C/V 0.4 C/V V = 3.0V to 3.6V DD DD T = +25C C/V 0.15 C V = 3.3V+150 mV (0 to 1 MHz) A DD DD PP AC Temperature Sensor Accuracy +75C < T +95C T -1.0 0.5 +1.0 C A ACY +40C < T +125C T -2.0 1 +2.0 C A ACY -20C < T +125C T -3.0 2 +3.0 C A ACY T = -40C T -2 C A ACY Conversion Time 0.25C/bit t 65 125 ms 15 s/sec (typ.) (See Section 5.2.3.2) CONV Event Output (Open-drain) High-level Current (leakage) I 1 A V = V OH OH DD Low-level Voltage V 0.4 V I = 3 mA OL OL EEPROM Write Cycle (byte/page) t 3 5 ms WC Endurance T = +25C 1M cycles V = 5V, Note 1 A DD Write Protect High Voltage V 8 12 V Applied at A0 pin, Note 1 HI WP Thermal Response DFN t 0.7 s Time to 63% (89C) RES 25C (Air) to 125C (oil bath) TSSOP t 1.4 s RES Note 1: Characterized but not production tested. DS21996B-page 2 2008 Microchip Technology Inc.