MSC020SDA120B Microchip

MSC020SDA120K Zero Recover y Silicon Carbide Schottky Diode Product Over view The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC020SDA120K is a 1200 V, 20 A SiC SBD in a two-lead TO-220 package. Features The following are key features of the MSC020SDA120K device: No reverse recover y Low for ward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits The following are benefits of the MSC020SDA120K device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density Applications The MSC020SDA120K device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4120 MSC020SDA120K Datasheet Revision A 1Device Specific ations Device Specific ations This section shows the specific ations of the MSC020SDA120K device. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC020SDA120K device. T = 25 C unless C other wise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit V Maximum DC reverse voltage 1200 V R V Maximum peak repetitive reverse voltage 1200 RRM V Maximum working peak reverse voltage 1200 RWM I Maximum DC for ward current T = 25 C 49 A F C T = 135 C 22 C T = 145 C 18 C I Repetitive peak for ward surge current (T = 25 C, 64 FRM C t = 8.3 ms, half sine wave) p I Non-repetitive for ward surge current (T = 25 C, 115 FSM C t = 8.3 ms, half sine wave) p P Power dissipation T = 25 C 186 W TOT C T = 110 C 80 C E Single pulse avalanche energy (starting T = 25 C, 100 mJ AS J peak I = 20 A) L 053-4120 MSC020SDA120K Datasheet Revision A 2