MSCSM70AM025CT6LIAG Microchip

MSCSM70AM025CT6LIAG Preliminary data V = 700V DSS Very low stray inductance R = 2.5m typ Tj = 25C DSon Phase leg SiC Power Module I = 689*A Tc = 25C D Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies EV motor and traction drive Features SiC Power MOSFET - Low R DS(on) - High temperature performance SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring M4 & M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance Benefits High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant All ratings Tj = 25C unless otherwise specified Absolute maximum ratings (per SiC MOSFET) Symbol Parameter Max ratings Unit V Drain - Source Voltage 700 V DSS T = 25C 689* c I Continuous Drain Current D T = 80C 548* A c I Pulsed Drain current 1380 DM V Gate - Source Voltage -10/25 V GS R Drain - Source ON Resistance 3.2 DSon m P Power Dissipation T = 25C 1882 W D c *Specification of SiC MOSFET device but output current must be limited due to size of power connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1 5 MSCSM70AM025CT6LIAG PD0 April, 2020 MSCSM70AM025CT6LIAG Preliminary data Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Drain Current V = 0V V = 700V 600 A DSS GS DS T = 25C 2.5 3.2 V = 20V j GS R Drain Source on Resistance DS(on) m I = 240A T = 175C 3.2 D j V Gate Threshold Voltage V = V , I = 24mA 1.9 2.4 V GS(th) GS DS D I Gate Source Leakage Current V = 20 V, V = 0V 600 nA GSS GS DS Dynamic Characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance 27 iss V = 0V GS C Output Capacitance V = 700V 3 nF oss DS f = 1MHz C Reverse Transfer Capacitance 0.17 rss Q Total gate Charge 1290 g V = -5/20V GS Q Gate Source Charge V = 470V 348 nC gs Bus I = 240A D Q Gate Drain Charge 210 gd T Turn-on Delay Time 40 d(on) V = -5/+20V GS Tr Rise Time 35 V = 400V Bus ns I = 480A T = 150C D J T Turn-off Delay Time 50 d(off) R = TBD R = TBD GON GOFF T Fall Time 20 f V = -5/+20V GS E Turn on Energy V = 400V T = 150C TBD J on Bus J I = 480A D R = TBD GON E Turn off Energy T = 150C TBD J off R = TBD J GOFF R Internal gate resistance 1.25 Gint RthJC Junction to Case Thermal Resistance 0.08 C/W Body diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V I = 240A 3.4 GS SD V Diode Forward Voltage V SD VGS = -5V ISD = 240A 3.8 t Reverse Recovery Time 38 ns rr ISD = 240A VGS = -5V Qrr Reverse Recovery Charge 1.9 C V = 400V di /dt = 6000A/s R F I Reverse Recovery Current 89 A rr 2 5 MSCSM70AM025CT6LIAG PD0 April, 2020