MSD50-12 Microchip

MSD50 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 50 Amp Applications y Three phase rectifiers for power supplies y Rectifiers for DC motor field supplies y Battery charger rectifiers y Input rectifiers for variable frequency drives Circuit Features 3 y Three phase bridge rectifier 1 y Blocking voltage:800 to 1800V MSD 7 y Heat transfer through aluminum oxide DCB 2 ceramic isolated metal baseplate 4 y Glass passivated chip Module Type TYPE V V RRM RSM MSD50-08 800V 900V MSD50-12 1200V 1300V MSD50-16 1600V 1700V MSD50-18 1800V 1900V Maximum Ratings Symbol Conditions Values Units ID 50 A Tc=85 IFSM 420 A t=10mS Tvj =45 2 2 i t 880 A s t=10mS Tvj =45 Visol a.c.50Hz r.m.s. 1min 3000 V Tvj -40 to 150 Tstg -40 to 125 Ms To heatsink(M5) 35% Nm Weight Module 78 g Thermal Characteristics Symbol Conditions Values Units Rth(j-c) Per diode 1.5 /W Rth(c-s) Module 0.2 /W Electrical Characteristics Symbol Conditions Values Units VFM 1.5 V T=25 IFM =100A Tvj =25 VRD=VRRM 0.2 mA IRD 3 mA Tvj =150 VRD=VRRM MSD50 Rev 0 www.microsemi.com Dec, 2009 1/4 MSD50 Performance Curves 200 120 A W 150 Typ. 100 60 25 125 50 Pvtot IF 0 0 0 ID 25 50 A 0 VF 0.5 1.0 1.5 2.0 V Fig2. Power dissipation Fig1. Forward Characteristics 2.0 600 50HZ A / W Zth(j-C) 1.5 400 1.0 200 0.5 0 0 0.001 0.01 0.1 1 10 100 S 1 10 cycles 100 Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current 100 A 80 60 40 20 ID 0 0 Tc 50 100 150 Fig5.Forward Current Derating Curve MSD50 Rev 0 www.microsemi.com Dec, 2009 2/4