MSD52-12 Microchip

MSD52 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 50 Amp Applications y Three phase rectifiers for power supplies y Rectifiers for DC motor field supplies y Battery charger rectifiers y Input rectifiers for variable frequency drives Circuit + Features ~ MSD ~ y Three phase bridge rectifier ~ y Blocking voltage: 800 to 1800V y Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate y Glass passivated chip Module Type TYPE VRRM VRSM MSD52 08 800V 900V MSD52 12 1200V 1300V MSD52 16 1600V 1700V MSD52 18 1800V 1900V Maximum Ratings Symbol Conditions Values Units 50 A ID Tc=110 460 A IFSM t=10mS Tvj =45 2 2 i t 1050 A s t=10mS Tvj =45 a.c.50Hz r.m.s. 1min 3000 V Visol -40 to 150 Tvj -40 to 125 Tstg Mt To terminals(M5) 515% Nm Ms To heatsink(M5) 515% Nm Weight Module 135 g Thermal Characteristics Symbol Conditions Values Units Per diode 1.45 Rth(j-c) /W Module 0.07 Rth(c-s) /W Electrical Characteristics Symbol Conditions Values Units VFM 1.8 V T=25 IFM =150A Tvj =25 VRD=VRRM 0.3 mA IRD 5 mA Tvj =150 VRD=VRRM MSD52-Rev 1 www.microsemi.com Dec, 2009 1/3 - MSD52 Performance Curves 200 120 A W 150 Typ. 100 60 25 125 50 Pvtot IF 0 0 0 VF 0.5 1.0 1.5 2.0 V 0 ID 25 50 A Fig2. Power dissipation Fig1. Forward Characteristics 2.0 600 50Hz /W A Zth(j-C 1.5 400 1.0 200 0.5 0 1 10 cycles 100 0 0.001 0.01 0.1 1 10 100 S Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge Current 100 A 80 60 40 20 ID 0 0 Tc 50 100 150 C Fig5.Forward Current Derating Curve MSD52-Rev 1 www.microsemi.com Dec, 2009 2/3