X-On Electronics has gained recognition as a prominent supplier of MSMCJ11CA ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. MSMCJ11CA ESD Suppressors / TVS Diodes are a product manufactured by Microchip. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

MSMCJ11CA Microchip

MSMCJ11CA electronic component of Microchip
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Part No.MSMCJ11CA
Manufacturer: Microchip
Category: ESD Suppressors / TVS Diodes
Description: TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor
Datasheet: MSMCJ11CA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.725 ea
Line Total: USD 1.72 
Availability - 2
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.725
100 : USD 1.7135

   
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RoHS - XON
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We are delighted to provide the MSMCJ11CA from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSMCJ11CA and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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1N5610 thru 1N5613 Qualified Levels: Voidless Hermetically Sealed Unidirectional JAN, JANTX, and Available on Transient Voltage Suppressors JANTXV commercial versions Qualified per MIL-PRF-19500/434 DESCRIPTION This series of industry recognized voidless hermetically sealed unidirectional Transient Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak Standoff Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard- glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in a surface mount MELF package configuration as a special order. Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. Important: For the latest information, visit our website 1N5610 thru 1N5613 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only. MARKING: Body painted and part number. POLARITY: Cathode band. Tape & Reel option: Standard per EIA-296. Consult factory for quantities. Weight: 1270 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5610 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant SP = Reference JANS Blank = Commercial JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition I Breakdown Current: The current used for measuring Breakdown Voltage V . (BR) (BR) I Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. D I Peak Pulse Current: The peak current during the impulse. PP P Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I . PP PP T Temperature Solder Pad: The maximum solder temperature that can be safely applied to the terminal. SP Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified V(BR) current temperature. V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. (BR) V Maximum clamping voltage at specified I (Peak Pulse Current) at the specified pulse conditions. C PP Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is V WM also referred to as Standoff Voltage. ELECTRICAL CHARACTERISTICS MINIMUM BREAKDOWN WORKING MAX MAXIMUM MAXIMUM MAXIMUM BREAK CURRENT PEAK STANDOFF CLAMPING PEAK PULSE TEMP. DOWN MAXIMUM dc REVERSE CURRENT VOLTAGE CURRENT COEF. TYPE VOLTAGE CURRENT VOLTAGE I V I OF V D C PP (BR) o V T = +25 C V V 10/1000 s 8/20 s 10/1000 s (BR) A WM WM V(BR) 1.0 mA I (BR) o Volts mA V (pk) A V (pk) A (pk) A (pk) % / C 1N5610 33.0 75.0 30.5 5 47.6 193 32.0 .093 1N5611 43.7 53.0 40.3 5 63.5 136 24.0 .094 1N5612 54.0 43.0 49.0 5 78.5 116 19.0 .096 1N5613 191 12.5 175 5 265 33 5.7 .100 T4-LDS-0241, Rev. 1 (112023) 2011 Microsemi Corporation Page 2 of 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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