MSTC60 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 60Amp Applications y Power Converters y Lighting Control y DC Motor Control and Drives y Heat and temperature control Circuit Features 6 y International standard package 7 1 2 3 MSTC y High Surge Capability y Glass passivated chip 5 y Simple Mounting 4 y Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC60-08 800V 900V MSTC60-12 1200V 1300V MSTC60-16 1600V 1700V Maximum Ratings Symbol Conditions Values Units o I Sine 180 Tc=85 60 A TAV T =45 t=10ms, sine 1500 VJ I A TSM 1250 T =125 t=10ms, sine VJ T =45 t=10ms, sine 11000 2 VJ i t A2s 8000 T =125 t=10ms, sine VJ Visol a.c.50HZ r.m.s. 1min 3000 V Tvj -40 to 125 Tstg -40 to 125 Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm T = T , 2/3V ,I =500mA VJ VJM DRM G di/dt 150 A/us Tr<0.5us,tp>6us dv/dt T = T ,2/3V , linear voltage rise 1000 V/us J VJM DRM 2 a Maximum allowable acceleration 50 m/s Weight Module(Approximately) 100 g Thermal Characteristics Symbol Conditions Values Units Rth(j-c) Cont. per thyristor / per module 0.57/0.29 /W Rth(c-s) per thyristor / per module 0.2/0.1 /W MSTC60 Rev 0 www.microsemi.com Oct 2011 1/4 MSTC60 Electrical Characteristics Values Symbol Conditions Units Min. Typ. Max. V T=25 I =200A 1.65 V TM TM I /I T =T ,V =V ,V =V 15 mA RRM DRM VJ VJM R RRM D DRM V 0.9 V For power-loss calculations only (T =125) TO VJ r T =T 3.5 m T VJ VJM V 3.0 V T =25 , V =6V GT VJ D I T =25 , V =6V 150 mA GT VJ D V T =125 , V =2/3V 0.25 V GD VJ D DRM I T =125 , V =2/3V 6 mA GD VJ D DRM I T =25 , R = 33 300 600 mA L VJ G I T =25 , V =6V 150 250 mA H VJ D us tgd T =25, I =1A, di /dt=1A/us 1 VJ G G us tq T =T 80 VJ VJM MSTC60 Rev 0 www.microsemi.com Oct 2011 2/4