GaAs Varactor Diodes Hyperabrupt TM MV30011 MV34010 Features High Q Values for Higher Frequency Performance Large Tuning Ratios Low Reverse Current Gamma Values to 1.5 Available as Bondable Chips and as Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available Applications Description VCOs Microsemis GaAs hyperabrupt junction varactor Phase-Locked Oscillators diodes are fabricated from epitaxial layers grown at Microsemi by the Chemical Vapor Deposition High Q Tunable Filters technique. The layers are processed at using Phase Shifters proprietary techniques resulting in varactors with Pre-Selectors constant gamma, high Q factor and repeatable tuning curves. These varactors are available in a variety of microwave ceramic packages or bondable chips for operation from UHF to Maximum Ratings millimeter wave frequencies. Reverse Voltage Breakdown Voltage Forward Current 50 mA 25C Incident Power +20 dBm 25C Operating Temperature -55C to +175C Storage Temperature -55C to +200C IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com 1 The MS3000 Series of products are Specifications are subject to change. Consult factory for the latest information. supplied with a RoHS complaint Gold finish. These devices are ESD sensitive and must be handled using ESD precautions. Microsemi Copyright 2008 Microwave Products Rev: 2009-05-11 Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 GaAs Varactor Diodes Hyperabrupt TM MV30011 MV34010 High Q Constant Gamma Tuning Varactors (Specifications 25C) Gamma = 1.25 Gamma = 0.75 C 4 V Typ. Min. Typ. Min. C 4V T T C Part 2V / V Typ. Part C Typ. 10% 10% 2V / V T T BR BR 1, 3, 4 2 2 5 1, 3, 4 5 Number (pF) Q -4 V Number Q -4 V C 20V 10 A (V) (pF) C 12V 10 A (V) T T MV32001 0.6 2.8 22 4000 MV31001 0.6 4.2 15 4000 MV32002 1.0 3.1 22 3000 MV31002 1.0 5.1 15 3000 MV32003 1.2 3.2 22 3000 MV31003 1.2 5.4 15 3000 MV32004 1.5 3.3 22 3000 MV31004 1.5 5.7 15 3000 MV32005 1.8 3.4 22 3000 MV31005 1.8 5.9 15 3000 MV32006 2.2 3.5 22 3000 MV31006 2.2 6.2 15 3000 MV32007 2.5 3.6 22 2500 MV31007 2.5 6.3 15 2000 MV32008 3.0 3.6 22 2500 MV31008 3.0 6.5 15 2000 MV32009 3.6 3.7 22 2000 MV31009 3.6 6.7 15 2000 MV32010 4.5 3.8 22 1500 MV31010 4.5 6.8 15 1500 C 4 V Typ. Min. T C Part 10% 2V / V Typ. T BR Gamma = 1.00 1, 3, 4 5 2 Number (pF) C 20V 10 A (V) Q -4V T C 4 V Typ. Min. MV31011 0.5 5.5 22 4000 T Part C V Typ. 10% 2V / T BR MV31012 0.7 6.5 22 4000 2 1, 3, 4 5 Number Q -4V (pF) C 12V 10 A (V) T MV31013 1.0 7.7 22 3000 MV30001 0.6 3.2 15 4000 MV31014 1.2 8.3 22 3000 MV30002 1.0 3.7 15 3000 MV31015 1.5 9.1 22 3000 MV30003 1.2 3.8 15 3000 MV30004 1.5 4.0 15 3000 MV31016 1.8 9.6 22 3000 MV30005 1.8 4.1 15 3000 MV31017 2.0 9.9 22 3000 MV30006 2.2 4.2 15 3000 MV31018 2.2 10.2 22 3000 MV30007 2.5 4.3 15 2500 MV31019 2.7 10.8 22 2000 MV30008 3.0 4.4 15 2500 MV31020 3.3 11.3 22 2000 MV30009 3.6 4.5 15 2000 MV31021 3.7 11.5 22 2000 MV30010 4.5 4.5 15 1500 MV31022 4.7 12.0 22 1500 MV31023 5.6 12.3 22 1500 C 4 V Typ. Min. T C Part 10% 2V / V Typ. T MV31024 6.8 12.6 22 1500 BR 1, 3, 4 5 2 Number (pF) C 20V 10 A (V) Q -4V T MV31025 8.2 12.9 22 1500 MV30011 0.6 3.9 22 4000 MV31026 10.0 13.1 22 1500 MV30012 1.0 4.6 22 3000 MV30013 1.2 4.9 22 3000 MV30014 1.5 5.2 22 3000 MV30015 1.8 5.4 22 3000 1 Capacitance is specified at 1 MHz. 2 Measured by DeLoach Technique and referenced to 50 MHz. MV30016 2.2 5.6 22 3000 3 Tightened tolerances available upon request. 4 MV30017 2.5 5.8 22 2500 Package capacitance is 0.15 pF is included in the above specification. 5 The capacitance ratio is calculated using C = 0.15 pF. Ratios will vary P MV30018 3.0 6.0 22 2500 depending upon package selection. MV30019 3.6 6.1 22 2000 MV30020 4.5 6.3 22 1500 Microsemi Copyright 2008 Microwave Products Rev: 2009-05-11 Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748