Obsolete Device Please use SST25VF080B SST25PF080B 8 Mbit 2.3-3.6V SPI Serial Flash Features Product Description Single Voltage Read and Write Operations The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count - 2.3-3.6V package which occupies less board space and ulti- Serial Interface Architecture mately lowers total system costs. The SST25PF080B - SPI Compatible: Mode 0 and Mode 3 devices are enhanced with improved operating fre- High Speed Clock Frequency quency and lower power consumption. SST25PF080B - 80 MHz (2.7-3.6V) SPI serial flash memories are manufactured with pro- - 50 MHz (2.3-2.7V) prietary, high-performance CMOS SuperFlash technol- ogy. The split-gate cell design and thick-oxide tunneling Superior Reliability injector attain better reliability and manufacturability - Endurance: 100,000 Cycles (typical) compared with alternate approaches. - Greater than 100 years Data Retention The SST25PF080B devices significantly improve per- Low Power Consumption: formance and reliability, while lowering power con- - Active Read Current: 10 mA (typical) sumption. The devices write (Program or Erase) with a - Standby Current: 5 A (typical) single power supply of 2.3-3.6V for SST25PF080B. Flexible Erase Capability The total energy consumed is a function of the applied - Uniform 4 KByte sectors voltage, current, and time of application. Since for any - Uniform 32 KByte overlay blocks given voltage range, the SuperFlash technology uses - Uniform 64 KByte overlay blocks less current to program and has a shorter erase time, the total energy consumed during any Erase or Pro- Fast Erase and Byte-Program: gram operation is less than alternative flash memory - Chip-Erase Time: 35 ms (typical) technologies. - Sector-/Block-Erase Time: 18 ms (typical) - Byte-Program Time: 7 s (typical) The SST25PF080B device is offered in 8-lead SOIC (150 mils), 8-lead SOIC (200 mils), and 8-contact Auto Address Increment (AAI) Programming WSON (6mm x 5mm). See Figure 2-1 for pin assign- - Decrease total chip programming time over ments. Byte-Program operations End-of-Write Detection - Software polling the BUSY bit in Status Register - Busy Status readout on SO pin in AAI Mode Hold Pin (HOLD ) - Suspends a serial sequence to the memory without deselecting the device Write Protection (WP ) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register Temperature Range - Commercial: 0C to +70C Packages Available - 8-lead SOIC (150 mils) - 8-lead SOIC (200 mils) - 8-contact WSON (6mm x 5mm) All devices are RoHS compliant 2014 Microchip Technology Inc. DS20005137B-page 1SST25PF080B 1.0 BLOCK DIAGRAM SuperFlash X - Decoder Memory Address Buffers and Latches Y - Decoder I/O Buffers Control Logic and Data Latches Serial Interface 25137 B1.0 CE SCK SI SO WP HOLD FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM DS20005137B-page 2 2014 Microchip Technology Inc.