SST25VF512A-33-4C-SAE Microchip

512 Kbit SPI Serial Flash SST25VF512A A Microchip Technology Company Data Sheet SSTs serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512A SPI serial flash memory is manufactured with SSTs proprietary, high-performance CMOS SuperFlash technology. The split- gate cell design and thick-oxide tunneling injector attain better reliability and man- ufacturability compared with alternate approaches. Features Single 2.7-3.6V Read and Write Operations End-of-Write Detection Software Status Serial Interface Architecture Hold Pin (HOLD ) SPI Compatible: Mode 0 and Mode 3 Suspends a serial sequence to the memory 33 MHz Max Clock Frequency without deselecting the device Superior Reliability Write Protection (WP ) Endurance: 100,000 Cycles (typical) Enables/Disables the Lock-Down function of the status Greater than 100 years Data Retention register Low Power Consumption: Software Write Protection Active Read Current: 7 mA (typical) Write protection through Block-Protection bits in status Standby Current: 8 A (typical) register Flexible Erase Capability Temperature Range Uniform 4 KByte sectors Commercial: 0C to +70C Uniform 32 KByte overlay blocks Industrial: -40C to +85C Extended: -20C to +85C Fast Erase and Byte-Program: Packages Available Chip-Erase Time: 70 ms (typical) Sector- or Block-Erase Time: 18 ms (typical) 8-lead SOIC 150 mil body width Byte-Program Time: 14 s (typical) 8-contact WSON (5mm x 6mm) Auto Address Increment (AAI) Programming Allnon-Pb(lead-free)devicesareRoHScompliant Decrease total chip programming time over Byte-Pro- gram operations 2011 Silicon Storage Technology, Inc. www.microchip.com DS25090A 10/11512 Kbit SPI Serial Flash SST25VF512A A Microchip Technology Company Data Sheet Product Description SSTs serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25VF512A SPI serial flash memory is manufactured with SSTs proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and man- ufacturability compared with alternate approaches. The SST25VF512A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512A device operates with a single 2.7-3.6V power supply. The SST25VF512A device is offered in both 8-lead SOIC and 8-contact WSON packages. See Figure 2 for the pin assignments. 2011 Silicon Storage Technology, Inc. DS25090A 10/11 2