SST26VF032B / SST26VF032BA
2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
Security ID
Features
- One-Time Programmable (OTP) 2 KByte, Secure ID
Single Voltage Read and Write Operations
- 64 bit unique, factory pre-programmed identifier
- 2.7-3.6V or 2.3-3.6V
- User-programmable area
Serial Interface Architecture
Temperature Range
- Nibble-wide multiplexed I/Os with SPI-like serial
- Industrial: -40C to +85C
command structure
- Industrial Plus: -40C to +105C
- Mode 0 and Mode 3
Automotive AECQ-100 Grade 2 and Grade 3
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
Packages Available
High Speed Clock Frequency
- 8-contact WDFN (6mm x 5mm)
- 2.7-3.6V: 104 MHz max
- 8-lead SOIJ (5.28 mm)
- 2.3-3.6V: 80 MHz max
- 24-ball TBGA (6mm x 8mm)
Burst Modes
All devices are RoHS compliant
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
Product Description
Superior Reliability
The Serial Quad I/O (SQI) family of flash-memory
- Endurance: 100,000 Cycles (min)
devices features a six-wire, 4-bit I/O interface that allows for
- Greater than 100 years Data Retention
low-power, high-performance operation in a low pin-count
Low Power Consumption:
package. SST26VF032B/032BA also support full com-
- Active Read current: 15 mA (typical @ 104 MHz)
mand-set compatibility to traditional Serial Peripheral Inter-
- Standby Current: 15 A (typical)
face (SPI) protocol. System designs using SQI flash devices
Fast Erase Time
occupy less board space and ultimately lower system costs.
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
All members of the 26 Series, SQI family are manufactured
- Chip Erase: 35 ms (typ), 50 ms (max)
with proprietary, high-performance CMOS SuperFlash
Page-Program
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
- 256 Bytes per page in x1 or x4 mode
compared with alternate approaches.
End-of-Write Detection
SST26VF032B/032BA significantly improve performance
- Software polling the BUSY bit in status register
and reliability, while lowering power consumption. These
Flexible Erase Capability
devices write (Program or Erase) with a single power supply
- Uniform 4 KByte sectors
of 2.3-3.6V. The total energy consumed is a function of the
- Four 8 KByte top and bottom parameter overlay
applied voltage, current, and time of application. Since for
blocks
any given voltage range, the SuperFlash technology uses
- One 32 KByte top and bottom overlay block
less current to program and has a shorter erase time, the
- Uniform 64 KByte overlay blocks
total energy consumed during any Erase or Program opera-
Write-Suspend
tion is less than alternative flash memory technologies.
- Suspend Program or Erase operation to access
SST26VF032B/032BA are offered in 8-contact WDFN
another block/sector
(6 mm x 5 mm), 8-lead SOIJ (5.28 mm), and 24-ball
Software Reset (RST) mode
TBGA(6mm x 8mm). See Figure 2-2 for pin assignments.
Software Write Protection
Two configurations are available upon order.
- Individual-Block Write Protection with permanent
SST26VF032B default at power-up has the WP# and
lock-down capability
HOLD# pins enabled, and the SIO2 and SIO3 pins dis-
- 64 KByte blocks, two 32 KByte blocks, and abled, to initiate SPI-protocol operations.
eight 8 KByte parameter blocks
SST26VF032BA default at power-up has the WP# and
HOLD# pins disabled, and the SIO2 and SIO3 pins
- Read Protection on top and bottom 8 KByte
parameter blocks
2013-2019 Microchip Technology Inc. DS20005218G-page 1SST26VF032B / SST26VF032BA
enabled, to initiate Quad I/O operations. See I/O Con-
figuration (IOC) on page 13 for more information about
configuring WP#/HOLD# and SIO2/SIO3 pins.
DS20005218G-page 2 2013-2019 Microchip Technology Inc.